Abstract
The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2%, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4% because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.
Original language | English |
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Pages (from-to) | 1-8 |
Number of pages | 8 |
Journal | Integrated Ferroelectrics |
Volume | 141 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2013 |
Externally published | Yes |
Keywords
- Ferroelectric property
- PZT film
- Raman spectroscopy
- Site-occupation
- Substitution ion
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics
- Control and Systems Engineering