Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property

Ken Nishida, Minoru Osada, Hiroshi Uchida, Hiroshi Nakaki, Hiroshi Funakubo, Hiromi Shima, Masamichi Nishide, Takeshi Tai, Kim Jin Woonhg, Masashi Matsuoka, Takashi Katoda, Takashi Yamamoto

Research output: Contribution to journalArticle

Abstract

The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2%, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4% because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalIntegrated Ferroelectrics
Volume141
Issue number1
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • Ferroelectric property
  • PZT film
  • Raman spectroscopy
  • Site-occupation
  • Substitution ion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Control and Systems Engineering

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  • Cite this

    Nishida, K., Osada, M., Uchida, H., Nakaki, H., Funakubo, H., Shima, H., Nishide, M., Tai, T., Woonhg, K. J., Matsuoka, M., Katoda, T., & Yamamoto, T. (2013). Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property. Integrated Ferroelectrics, 141(1), 1-8. https://doi.org/10.1080/10584587.2013.772012