Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property

Ken Nishida, Minoru Osada, Hiroshi Uchida, Hiroshi Nakaki, Hiroshi Funakubo, Hiromi Shima, Masamichi Nishide, Takeshi Tai, Kim Jin Woonhg, Masashi Matsuoka, Takashi Katoda, Takashi Yamamoto

Research output: Contribution to journalArticle

Abstract

The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2%, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4% because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalIntegrated Ferroelectrics
Volume141
Issue number1
DOIs
Publication statusPublished - 2013
Externally publishedYes

Fingerprint

occupation
Ferroelectric materials
Substitution reactions
Ions
substitutes
Raman spectroscopy
ions

Keywords

  • Ferroelectric property
  • PZT film
  • Raman spectroscopy
  • Site-occupation
  • Substitution ion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Control and Systems Engineering

Cite this

Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property. / Nishida, Ken; Osada, Minoru; Uchida, Hiroshi; Nakaki, Hiroshi; Funakubo, Hiroshi; Shima, Hiromi; Nishide, Masamichi; Tai, Takeshi; Woonhg, Kim Jin; Matsuoka, Masashi; Katoda, Takashi; Yamamoto, Takashi.

In: Integrated Ferroelectrics, Vol. 141, No. 1, 2013, p. 1-8.

Research output: Contribution to journalArticle

Nishida, K, Osada, M, Uchida, H, Nakaki, H, Funakubo, H, Shima, H, Nishide, M, Tai, T, Woonhg, KJ, Matsuoka, M, Katoda, T & Yamamoto, T 2013, 'Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property', Integrated Ferroelectrics, vol. 141, no. 1, pp. 1-8. https://doi.org/10.1080/10584587.2013.772012
Nishida, Ken ; Osada, Minoru ; Uchida, Hiroshi ; Nakaki, Hiroshi ; Funakubo, Hiroshi ; Shima, Hiromi ; Nishide, Masamichi ; Tai, Takeshi ; Woonhg, Kim Jin ; Matsuoka, Masashi ; Katoda, Takashi ; Yamamoto, Takashi. / Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property. In: Integrated Ferroelectrics. 2013 ; Vol. 141, No. 1. pp. 1-8.
@article{052dc5f2bca9469eb8c5556d1f3adb22,
title = "Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property",
abstract = "The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2{\%}, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4{\%} because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.",
keywords = "Ferroelectric property, PZT film, Raman spectroscopy, Site-occupation, Substitution ion",
author = "Ken Nishida and Minoru Osada and Hiroshi Uchida and Hiroshi Nakaki and Hiroshi Funakubo and Hiromi Shima and Masamichi Nishide and Takeshi Tai and Woonhg, {Kim Jin} and Masashi Matsuoka and Takashi Katoda and Takashi Yamamoto",
year = "2013",
doi = "10.1080/10584587.2013.772012",
language = "English",
volume = "141",
pages = "1--8",
journal = "Integrated Ferroelectrics",
issn = "1058-4587",
publisher = "Taylor and Francis Ltd.",
number = "1",

}

TY - JOUR

T1 - Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property

AU - Nishida, Ken

AU - Osada, Minoru

AU - Uchida, Hiroshi

AU - Nakaki, Hiroshi

AU - Funakubo, Hiroshi

AU - Shima, Hiromi

AU - Nishide, Masamichi

AU - Tai, Takeshi

AU - Woonhg, Kim Jin

AU - Matsuoka, Masashi

AU - Katoda, Takashi

AU - Yamamoto, Takashi

PY - 2013

Y1 - 2013

N2 - The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2%, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4% because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.

AB - The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2%, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4% because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.

KW - Ferroelectric property

KW - PZT film

KW - Raman spectroscopy

KW - Site-occupation

KW - Substitution ion

UR - http://www.scopus.com/inward/record.url?scp=84878698414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878698414&partnerID=8YFLogxK

U2 - 10.1080/10584587.2013.772012

DO - 10.1080/10584587.2013.772012

M3 - Article

AN - SCOPUS:84878698414

VL - 141

SP - 1

EP - 8

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

IS - 1

ER -