Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property

Ken Nishida*, Minoru Osada, Hiroshi Uchida, Hiroshi Nakaki, Hiroshi Funakubo, Hiromi Shima, Masamichi Nishide, Takeshi Tai, Kim Jin Woonhg, Masashi Matsuoka, Takashi Katoda, Takashi Yamamoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2%, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4% because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalIntegrated Ferroelectrics
Volume141
Issue number1
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • Ferroelectric property
  • PZT film
  • Raman spectroscopy
  • Site-occupation
  • Substitution ion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Control and Systems Engineering

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