Identification of ultradilute dopants in ceramics

Isao Tanaka, Teruyasu Mizoguchi, Masafumi Matsui, Satoru Yoshioka, Hirohiko Adachi, Tomoyuki Yamamoto, Toshihiro Okajima, Masanori Umesaki, Wai Yim Ching, Yoshiyuki Inoue, Masataka Mizuno, Hideki Araki, Yasuharu Shirai

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

The properties of ceramic materials are strongly influenced by the presence of ultradilute impurities (dopants). Near-edge X-ray absorption fine structure (NEXAFS) measurements using third-generation synchotron sources can be used to identify ultradilute dopants, provided that a good theoretical tool is available to interpret the spectra. Here, we use NEXAFS analysis and first-principles calculations to study the local environments of Ga dopants at levels of 10 p.p.m in otherwise high-purity MgO. This analysis suggests that the extra charge associated with substitutional Ga on a Mg site is compensated by the formation of a Mg vacancy. This defect model is then confirmed by positron lifetime measurements and planewave pseudopotential calculations. This powerful combination of techniques should provide a general method of identifying the defect states of ultradilute dopants in ceramics.

Original languageEnglish
Pages (from-to)541-545
Number of pages5
JournalNature Materials
Volume2
Issue number8
DOIs
Publication statusPublished - 2003 Aug

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Tanaka, I., Mizoguchi, T., Matsui, M., Yoshioka, S., Adachi, H., Yamamoto, T., Okajima, T., Umesaki, M., Ching, W. Y., Inoue, Y., Mizuno, M., Araki, H., & Shirai, Y. (2003). Identification of ultradilute dopants in ceramics. Nature Materials, 2(8), 541-545. https://doi.org/10.1038/nmat939