II-VI/III-V heterostructures: Epilayer-on-epilayer structures

R. L. Gunshor, L. A. Kolodziejski, Masakazu Kobayashi, N. Otsuka, A. V. Nurmikko

Research output: Contribution to journalArticle

Abstract

The molecular beam epitaxy (MBE) and the microstructural, optical, and electrical characterization of two technologically important heterojunctions, the CdTe/InSb and the ZnSe/GaAs, are described. The II-VI/III-V heterointerface is formed by the epitaxial growth of each layer in either separate MBE growth chambers, or by each layer growth occurring in a single growth chamber. For the case where separate growth chambers are used, the active interface is preserved by employing passivation techniques, or by transferring the sample between growth chambers in an ultrahigh vacuum transfer module. The aforementioned growth approaches allow for the formation of an ‘epitaxial’ heterojunction, to be utilized as an active part of a heterojunction device. The CdTe/InSb heterointerface is approximately lattice matched (2 molecules for the growth. No clear indication of mixed interfacial layers of In2Te3 is observed by Raman spectroscopy or transmission electron microscopy. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The highly resistive, stoichiometric ZnSe is employed as an insulator in two GaAs device configurations: a field effect transistor structure and a metal-insulator-semiconductor capacitor. Electrical characteristics of the ZnSe/GaAs interface provide evidence of the electrical integrity, with measurements of the interface state density resulting in numbers comparable to those reported for the (A1, Ga)As/GaAs interface.

Original languageEnglish
Pages (from-to)78-85
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1037
DOIs
Publication statusPublished - 1989 Mar 15
Externally publishedYes

Fingerprint

phytotrons
Heterostructures
Epilayers
Gallium Arsenide
Heterojunctions
Heterojunction
passivity
heterojunctions
molecular beam epitaxy
Passivation
CdTe
heterojunction devices
Epitaxy
Insulator
Molecular beam epitaxy
MIS (semiconductors)
integrity
ultrahigh vacuum
capacitors
indication

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

II-VI/III-V heterostructures : Epilayer-on-epilayer structures. / Gunshor, R. L.; Kolodziejski, L. A.; Kobayashi, Masakazu; Otsuka, N.; Nurmikko, A. V.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 1037, 15.03.1989, p. 78-85.

Research output: Contribution to journalArticle

Gunshor, R. L. ; Kolodziejski, L. A. ; Kobayashi, Masakazu ; Otsuka, N. ; Nurmikko, A. V. / II-VI/III-V heterostructures : Epilayer-on-epilayer structures. In: Proceedings of SPIE - The International Society for Optical Engineering. 1989 ; Vol. 1037. pp. 78-85.
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