III-V membrane buried heterostructure lasers on SiO                         
                        2
                                                 /Si substrate

Tomonari Sato; Takuro Fujii; Koji Takeda; Takaaki Kakitsuka; Hiroshi Fukuda; Tai Tsuchizawa; Shinji Matsuo

doi:10.1364/FIO.2018.FW1B.3

III-V membrane buried heterostructure lasers on SiO ₂ /Si substrate

Tomonari Sato, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A membrane buried heterostructure with a lateral p-i-n junction on SiO ₂ /Si substrate enables tight confinement of carriers and photons simultaneously, which enables us to achieve energy-efficient lasers.

Original language	English
Title of host publication	Frontiers in Optics, FIO 2018
Publisher	OSA - The Optical Society
ISBN (Print)	9781943580460
DOIs	https://doi.org/10.1364/FIO.2018.FW1B.3
Publication status	Published - 2018 Jan 1
Externally published	Yes
Event	Frontiers in Optics, FIO 2018 - Washington, DC, United States Duration: 2018 Sept 16 → 2018 Sept 20

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F114-FIO 2018

Conference

Conference	Frontiers in Optics, FIO 2018
Country/Territory	United States
City	Washington, DC
Period	18/9/16 → 18/9/20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/FIO.2018.FW1B.3

Cite this

Sato, T., Fujii, T., Takeda, K., Kakitsuka, T., Fukuda, H., Tsuchizawa, T., & Matsuo, S. (2018). III-V membrane buried heterostructure lasers on SiO ₂ /Si substrate In Frontiers in Optics, FIO 2018 (Optics InfoBase Conference Papers; Vol. Part F114-FIO 2018). OSA - The Optical Society. https://doi.org/10.1364/FIO.2018.FW1B.3

III-V membrane buried heterostructure lasers on SiO ₂ /Si substrate . / Sato, Tomonari; Fujii, Takuro; Takeda, Koji et al.

Frontiers in Optics, FIO 2018. OSA - The Optical Society, 2018. (Optics InfoBase Conference Papers; Vol. Part F114-FIO 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sato, T, Fujii, T, Takeda, K, Kakitsuka, T, Fukuda, H, Tsuchizawa, T & Matsuo, S 2018, III-V membrane buried heterostructure lasers on SiO ₂ /Si substrate in Frontiers in Optics, FIO 2018. Optics InfoBase Conference Papers, vol. Part F114-FIO 2018, OSA - The Optical Society, Frontiers in Optics, FIO 2018, Washington, DC, United States, 18/9/16. https://doi.org/10.1364/FIO.2018.FW1B.3

Sato T, Fujii T, Takeda K, Kakitsuka T, Fukuda H, Tsuchizawa T et al. III-V membrane buried heterostructure lasers on SiO ₂ /Si substrate In Frontiers in Optics, FIO 2018. OSA - The Optical Society. 2018. (Optics InfoBase Conference Papers). doi: 10.1364/FIO.2018.FW1B.3

Sato, Tomonari ; Fujii, Takuro ; Takeda, Koji et al. / III-V membrane buried heterostructure lasers on SiO ₂ /Si substrate Frontiers in Optics, FIO 2018. OSA - The Optical Society, 2018. (Optics InfoBase Conference Papers).

@inproceedings{3f245680033a4137b405e661ae31d100,

title = " III-V membrane buried heterostructure lasers on SiO 2 /Si substrate ",

abstract = " A membrane buried heterostructure with a lateral p-i-n junction on SiO 2 /Si substrate enables tight confinement of carriers and photons simultaneously, which enables us to achieve energy-efficient lasers. ",

author = "Tomonari Sato and Takuro Fujii and Koji Takeda and Takaaki Kakitsuka and Hiroshi Fukuda and Tai Tsuchizawa and Shinji Matsuo",

year = "2018",

month = jan,

day = "1",

doi = "10.1364/FIO.2018.FW1B.3",

language = "English",

isbn = "9781943580460",

series = "Optics InfoBase Conference Papers",

publisher = "OSA - The Optical Society",

booktitle = "Frontiers in Optics, FIO 2018",

note = "Frontiers in Optics, FIO 2018 ; Conference date: 16-09-2018 Through 20-09-2018",

}

TY - GEN

T1 - III-V membrane buried heterostructure lasers on SiO 2 /Si substrate

AU - Sato, Tomonari

AU - Fujii, Takuro

AU - Takeda, Koji

AU - Kakitsuka, Takaaki

AU - Fukuda, Hiroshi

AU - Tsuchizawa, Tai

AU - Matsuo, Shinji

PY - 2018/1/1

Y1 - 2018/1/1

N2 - A membrane buried heterostructure with a lateral p-i-n junction on SiO 2 /Si substrate enables tight confinement of carriers and photons simultaneously, which enables us to achieve energy-efficient lasers.

AB - A membrane buried heterostructure with a lateral p-i-n junction on SiO 2 /Si substrate enables tight confinement of carriers and photons simultaneously, which enables us to achieve energy-efficient lasers.

UR - http://www.scopus.com/inward/record.url?scp=85059357260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059357260&partnerID=8YFLogxK

U2 - 10.1364/FIO.2018.FW1B.3

DO - 10.1364/FIO.2018.FW1B.3

M3 - Conference contribution

AN - SCOPUS:85059357260

SN - 9781943580460

T3 - Optics InfoBase Conference Papers

BT - Frontiers in Optics, FIO 2018

PB - OSA - The Optical Society

T2 - Frontiers in Optics, FIO 2018

Y2 - 16 September 2018 through 20 September 2018

ER -