III-V membrane buried heterostructure lasers on SiO 2 /Si substrate

Tomonari Sato, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A membrane buried heterostructure with a lateral p-i-n junction on SiO 2 /Si substrate enables tight confinement of carriers and photons simultaneously, which enables us to achieve energy-efficient lasers.

Original languageEnglish
Title of host publicationFrontiers in Optics, FIO 2018
PublisherOSA - The Optical Society
ISBN (Print)9781943580460
Publication statusPublished - 2018 Jan 1
Externally publishedYes
EventFrontiers in Optics, FIO 2018 - Washington, DC, United States
Duration: 2018 Sep 162018 Sep 20

Publication series

NameOptics InfoBase Conference Papers
VolumePart F114-FIO 2018


ConferenceFrontiers in Optics, FIO 2018
CountryUnited States
CityWashington, DC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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  • Cite this

    Sato, T., Fujii, T., Takeda, K., Kakitsuka, T., Fukuda, H., Tsuchizawa, T., & Matsuo, S. (2018). III-V membrane buried heterostructure lasers on SiO 2 /Si substrate In Frontiers in Optics, FIO 2018 (Optics InfoBase Conference Papers; Vol. Part F114-FIO 2018). OSA - The Optical Society. https://doi.org/10.1364/FIO.2018.FW1B.3