III-V/Si integration technology for laser diodes and Mach-Zehnder modulators

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

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Abstract

This paper reviews a technology to heterogeneously integrate III-V semiconductors on a Si platform for the laser diodes and high-efficiency Mach-Zehnder modulators (MZMs) of optical transceivers. Membrane III-V semiconductor films provide efficient optical coupling between the III-V semiconductor devices and widely developed thin Si waveguide circuits. The membrane laser diode shows a fiber coupled output power from the Si waveguide of 4.6 mW and single-mode lasing with a side-mode suppression ratio of 49 dB. In addition, the high-efficiency MZM with a 700 μm long membrane InGaAsP/Si metal-oxide-semiconductor capacitor phase shifter shows a V π L of 0.09 Vcm, insertion loss of around 2 dB, and an eye opening at for 32 Gbit s -1 nonreturn-to-zero signal with pre-emphasis signal inputs.

Original languageEnglish
Article numberSB0803
JournalJapanese journal of applied physics
Volume58
Issue numberSB
DOIs
Publication statusPublished - 2019 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Hiraki, T., Aihara, T., Takeda, K., Fujii, T., Kakitsuka, T., Tsuchizawa, T., Fukuda, H., & Matsuo, S. (2019). III-V/Si integration technology for laser diodes and Mach-Zehnder modulators. Japanese journal of applied physics, 58(SB), [SB0803]. https://doi.org/10.7567/1347-4065/ab0741