III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

Takuma Aihara, Takuro Fujii, Hiroshi Fukuda, Tatsurou Hiraki, Takaaki Kakitsuka, Shinji Matsuo, Koji Takeda, Tai Tsuchizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08-0.11 Vcm in the C and L band at 25-80 degrees Celsius.

Original languageEnglish
Title of host publicationGFP 2019 - Group IV Photonics
PublisherIEEE Computer Society
ISBN (Electronic)9781728109053
DOIs
Publication statusPublished - 2019 Aug
Externally publishedYes
Event16th IEEE International Conference on Group IV Photonics, GFP 2019 - Singapore, Singapore
Duration: 2019 Aug 282019 Aug 30

Publication series

NameIEEE International Conference on Group IV Photonics GFP
Volume2019-August
ISSN (Print)1949-2081

Conference

Conference16th IEEE International Conference on Group IV Photonics, GFP 2019
CountrySingapore
CitySingapore
Period19/8/2819/8/30

Keywords

  • Optical modulator
  • Silicon photonics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Aihara, T., Fujii, T., Fukuda, H., Hiraki, T., Kakitsuka, T., Matsuo, S., Takeda, K., & Tsuchizawa, T. (2019). III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity. In GFP 2019 - Group IV Photonics [8853874] (IEEE International Conference on Group IV Photonics GFP; Vol. 2019-August). IEEE Computer Society. https://doi.org/10.1109/GROUP4.2019.8853874