Abstract
We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 μm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.
| Original language | English |
|---|---|
| Pages (from-to) | 4404-4409 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 6 B |
| Publication status | Published - 2002 Jun |
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Keywords
- Dynamic exposure
- Enlarged pattern mask
- Focusing X-ray mask
- Interference slit mask
- X-ray lithography
- X-ray mask
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Image formation by dynamic exposure with multispot beam in X-ray nanolithography. / Toyota, Eijiro; Washio, Masakazu.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 6 B, 06.2002, p. 4404-4409.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Image formation by dynamic exposure with multispot beam in X-ray nanolithography
AU - Toyota, Eijiro
AU - Washio, Masakazu
PY - 2002/6
Y1 - 2002/6
N2 - We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 μm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.
AB - We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 μm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.
KW - Dynamic exposure
KW - Enlarged pattern mask
KW - Focusing X-ray mask
KW - Interference slit mask
KW - X-ray lithography
KW - X-ray mask
UR - http://www.scopus.com/inward/record.url?scp=0036614696&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036614696&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0036614696
VL - 41
SP - 4404
EP - 4409
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 B
ER -