Abstract
We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 μm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.
Original language | English |
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Pages (from-to) | 4404-4409 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 41 |
Issue number | 6 B |
DOIs | |
Publication status | Published - 2002 Jun |
Keywords
- Dynamic exposure
- Enlarged pattern mask
- Focusing X-ray mask
- Interference slit mask
- X-ray lithography
- X-ray mask
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)