A 0.18 μm silicon on insulator (SOI) CMOS using hybrid trench isolation with high resistivity substrate (HRS) is proposed and revealed its impact on high performance embedded RF/analog applications. Using this technology, advantages of SOI MOSFETs due to the reduction of power loss is proven. Then, excellent body-fixing capability of this SOI MOSFET and high-quality on-chip inductance is demonstrated for RF/analog LSIs.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2000 Jan 1|
|Event||2000 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 2000 Jun 13 → 2000 Jun 15
ASJC Scopus subject areas
- Electrical and Electronic Engineering