Abstract
As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.
Original language | English |
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Article number | 062103 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2011 Aug 8 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors. / Hori, Masahiro; Shinada, Takahiro; Ono, Yukinori; Komatsubara, Akira; Kumagai, Kuninori; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao.
In: Applied Physics Letters, Vol. 99, No. 6, 062103, 08.08.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors
AU - Hori, Masahiro
AU - Shinada, Takahiro
AU - Ono, Yukinori
AU - Komatsubara, Akira
AU - Kumagai, Kuninori
AU - Tanii, Takashi
AU - Endoh, Tetsuo
AU - Ohdomari, Iwao
PY - 2011/8/8
Y1 - 2011/8/8
N2 - As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.
AB - As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.
UR - http://www.scopus.com/inward/record.url?scp=84860389332&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860389332&partnerID=8YFLogxK
U2 - 10.1063/1.3622141
DO - 10.1063/1.3622141
M3 - Article
AN - SCOPUS:84860389332
VL - 99
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 062103
ER -