Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors

Masahiro Hori, Takahiro Shinada, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    Research output: Contribution to journal › Article

    10 Citations (Scopus)

    Abstract

    As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.

    Original languageEnglish
    Article number062103
    JournalApplied Physics Letters
    Volume99
    Issue number6
    DOIs
    Publication statusPublished - 2011 Aug 8

    Fingerprint

    transconductance
    field effect transistors
    ions
    statistical distributions
    semiconductor devices
    transistors
    transport properties
    retarding
    electrostatics
    injection
    degradation
    impurities
    atoms
    electrons

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors. / Hori, Masahiro; Shinada, Takahiro; Ono, Yukinori; Komatsubara, Akira; Kumagai, Kuninori; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao.

    In: Applied Physics Letters, Vol. 99, No. 6, 062103, 08.08.2011.

    Research output: Contribution to journal › Article

    Hori, M, Shinada, T, Ono, Y, Komatsubara, A, Kumagai, K, Tanii, T, Endoh, T & Ohdomari, I 2011, 'Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors', Applied Physics Letters, vol. 99, no. 6, 062103. https://doi.org/10.1063/1.3622141
    Hori M, Shinada T, Ono Y, Komatsubara A, Kumagai K, Tanii T et al. Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors. Applied Physics Letters. 2011 Aug 8;99(6). 062103. https://doi.org/10.1063/1.3622141
    Hori, Masahiro ; Shinada, Takahiro ; Ono, Yukinori ; Komatsubara, Akira ; Kumagai, Kuninori ; Tanii, Takashi ; Endoh, Tetsuo ; Ohdomari, Iwao. / Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors. In: Applied Physics Letters. 2011 ; Vol. 99, No. 6.
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