Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors

Masahiro Hori, Takahiro Shinada, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.

Original languageEnglish
Article number062103
JournalApplied Physics Letters
Volume99
Issue number6
DOIs
Publication statusPublished - 2011 Aug 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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