Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

Masahiro Hori, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari, Takahiro Shinada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    With the gate length of MOSFETs approaching 10 nm, the channel region contains only one or a few dopant atoms. Thus, the number and position of dopant atoms become critical factors in determining device performance. In previous work, we have revealed that the control of not only the dopant atom number but also its position is essential by experimentally for the first time [1]. A several theoretical analyses of random dopant fluctuation (RDF) effects have been presented since 1990s [2,3,4]. However, the effect of individual dopant positions on device electrical properties is not well understood experimentally. Here, we report the fabrication of transistors whose channel dopants are implanted one by one using single-ion implantation (SII) method [5,6,7]. Electrical measurements reveal that controlling of discrete dopant position serves to highlight the improvements in device transconductance.

    Original languageEnglish
    Title of host publicationExtended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011
    Pages75-76
    Number of pages2
    DOIs
    Publication statusPublished - 2011
    Event11th International Workshop on Junction Technology, IWJT 2011 - Kyoto
    Duration: 2011 Jun 92011 Jun 10

    Other

    Other11th International Workshop on Junction Technology, IWJT 2011
    CityKyoto
    Period11/6/911/6/10

    Fingerprint

    Transconductance
    Field effect transistors
    Ion implantation
    Doping (additives)
    Atoms
    Transistors
    Electric properties
    Fabrication

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Hardware and Architecture

    Cite this

    Hori, M., Ono, Y., Komatsubara, A., Kumagai, K., Tanii, T., Endoh, T., ... Shinada, T. (2011). Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs. In Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011 (pp. 75-76). [5970003] https://doi.org/10.1109/IWJT.2011.5970003

    Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs. / Hori, Masahiro; Ono, Yukinori; Komatsubara, Akira; Kumagai, Kuninori; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao; Shinada, Takahiro.

    Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011. 2011. p. 75-76 5970003.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Hori, M, Ono, Y, Komatsubara, A, Kumagai, K, Tanii, T, Endoh, T, Ohdomari, I & Shinada, T 2011, Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs. in Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011., 5970003, pp. 75-76, 11th International Workshop on Junction Technology, IWJT 2011, Kyoto, 11/6/9. https://doi.org/10.1109/IWJT.2011.5970003
    Hori M, Ono Y, Komatsubara A, Kumagai K, Tanii T, Endoh T et al. Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs. In Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011. 2011. p. 75-76. 5970003 https://doi.org/10.1109/IWJT.2011.5970003
    Hori, Masahiro ; Ono, Yukinori ; Komatsubara, Akira ; Kumagai, Kuninori ; Tanii, Takashi ; Endoh, Tetsuo ; Ohdomari, Iwao ; Shinada, Takahiro. / Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs. Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011. 2011. pp. 75-76
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    AU - Tanii, Takashi

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