Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

Masahiro Hori, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari, Takahiro Shinada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With the gate length of MOSFETs approaching 10 nm, the channel region contains only one or a few dopant atoms. Thus, the number and position of dopant atoms become critical factors in determining device performance. In previous work, we have revealed that the control of not only the dopant atom number but also its position is essential by experimentally for the first time [1]. A several theoretical analyses of random dopant fluctuation (RDF) effects have been presented since 1990s [2,3,4]. However, the effect of individual dopant positions on device electrical properties is not well understood experimentally. Here, we report the fabrication of transistors whose channel dopants are implanted one by one using single-ion implantation (SII) method [5,6,7]. Electrical measurements reveal that controlling of discrete dopant position serves to highlight the improvements in device transconductance.

Original languageEnglish
Title of host publicationExtended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011
Pages75-76
Number of pages2
DOIs
Publication statusPublished - 2011 Sep 1
Event11th International Workshop on Junction Technology, IWJT 2011 - Kyoto, Japan
Duration: 2011 Jun 92011 Jun 10

Publication series

NameExtended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011

Conference

Conference11th International Workshop on Junction Technology, IWJT 2011
CountryJapan
CityKyoto
Period11/6/911/6/10

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ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture

Cite this

Hori, M., Ono, Y., Komatsubara, A., Kumagai, K., Tanii, T., Endoh, T., Ohdomari, I., & Shinada, T. (2011). Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs. In Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011 (pp. 75-76). [5970003] (Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011). https://doi.org/10.1109/IWJT.2011.5970003