Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application

Yuuichi Hirano, Takashi Ipposhi, Hai Dang, Takuji Matsumoto, Toshiaki Iwamatsu, Kouji Nii, Yasumasa Tsukamoto, Tomoaki Yoshizawa, Hisayuki Kato, Shigeto Maegawa, Kazutami Arimoto, Yasuo Inoue, Masahide Inuishi, Yuzuru Ohji

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure including connections of the access and the driver transistor's bodies to the word line is proposed to realize low-voltage operation. We developed the direct body contact technology to apply forward biases to the bodies without area penalties and increases of parasitic gate capacitances by using the hybrid trench isolation [1] for the first time. Moreover, the standby current does not change because the body bias is not applied when the word-line voltage is low level. It is successfully demonstrated that low-voltage and high-speed operation is achieved by using the ABC SOI SRAM.

Original languageEnglish
Pages (from-to)35-38
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Hirano, Y., Ipposhi, T., Dang, H., Matsumoto, T., Iwamatsu, T., Nii, K., Tsukamoto, Y., Yoshizawa, T., Kato, H., Maegawa, S., Arimoto, K., Inoue, Y., Inuishi, M., & Ohji, Y. (2003). Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application. Technical Digest - International Electron Devices Meeting, 35-38.