Nitridation technique of the gate-oxide top surface has been much studied to suppress the boron penetration from the doped gate poly-silicon and proved to be efficient against NBTI degradation. However there is another path for boron to penetrate to gate-oxide from the substrate, where this technique is helpless. We found that boron penetration from the S/D-extension becomes crucial issue on gate leakage and gate-oxide integrity especially for deep sub-micron pMOS, where stress from the sidewall and interlayer dielectrics accelerates to deteriorate those gate-oxide characteristics. We demonstrate that nitridation after gate etching is very efficient to control this new degradation mode. We also propose the totally-optimized transistor structure for nMOS and pMOS, which shows sufficient electrical property and reliability for low operational power (LOP) and low standby power (LSTP) of 65-nm node and beyond.
|Number of pages||2|
|Publication status||Published - 2004|
ASJC Scopus subject areas
- Electrical and Electronic Engineering