Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation

T. Kamioka, H. Imai, T. Watanabe, K. Ohmori, K. Shiraishi, Y. Kamakura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.

Original languageEnglish
Title of host publication2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages83-86
Number of pages4
DOIs
Publication statusPublished - 2011 Nov 1
Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
Duration: 2011 Sep 82011 Sep 10

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
CountryJapan
CityOsaka
Period11/9/811/9/10

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Keywords

  • EMC-MD method
  • MOSFET
  • assymetric channel
  • ballistic transport
  • collimation effect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Kamioka, T., Imai, H., Watanabe, T., Ohmori, K., Shiraishi, K., & Kamakura, Y. (2011). Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 83-86). [6035055] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035055