Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS

T. Yamashita, T. Kuroi, T. Uchida, S. Komori, K. Kobayashi, Masahide Inuishi, H. Miyoshi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Recessed LOCOS isolation using high pressure dry O2 oxidation has been studied. The effect of the high pressure dry O2 oxidation on the bird's beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.

Original languageEnglish
Pages (from-to)821-824
Number of pages4
JournalUnknown Journal
Publication statusPublished - 1996
Externally publishedYes

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isolation
Oxidation
oxidation
birds
Dynamic random access storage
Birds
integrity
Oxides
oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yamashita, T., Kuroi, T., Uchida, T., Komori, S., Kobayashi, K., Inuishi, M., & Miyoshi, H. (1996). Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS. Unknown Journal, 821-824.

Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS. / Yamashita, T.; Kuroi, T.; Uchida, T.; Komori, S.; Kobayashi, K.; Inuishi, Masahide; Miyoshi, H.

In: Unknown Journal, 1996, p. 821-824.

Research output: Contribution to journalArticle

Yamashita, T, Kuroi, T, Uchida, T, Komori, S, Kobayashi, K, Inuishi, M & Miyoshi, H 1996, 'Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS', Unknown Journal, pp. 821-824.
Yamashita T, Kuroi T, Uchida T, Komori S, Kobayashi K, Inuishi M et al. Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS. Unknown Journal. 1996;821-824.
Yamashita, T. ; Kuroi, T. ; Uchida, T. ; Komori, S. ; Kobayashi, K. ; Inuishi, Masahide ; Miyoshi, H. / Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS. In: Unknown Journal. 1996 ; pp. 821-824.
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