Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS

T. Yamashita*, T. Kuroi, T. Uchida, S. Komori, K. Kobayashi, M. Inuishi, H. Miyoshi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Recessed LOCOS isolation using high pressure dry O2 oxidation has been studied. The effect of the high pressure dry O2 oxidation on the bird's beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.

Original languageEnglish
Pages (from-to)821-824
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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