Impact of image force effect on gate-all-around Schottky barrier tunnel FET

Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, Kenji Ohmori, Takanobu Watanabe

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.

    Original languageEnglish
    Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781479950379
    DOIs
    Publication statusPublished - 2016 Apr 26
    EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
    Duration: 2014 Jul 282014 Jul 31

    Other

    OtherIEEE International Nanoelectronics Conference, INEC 2014
    CountryJapan
    CitySapporo
    Period14/7/2814/7/31

    Keywords

    • DIBL
    • GIBL
    • Image Force Effect
    • Schottky Barrier
    • Tunneling FET

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Hashimoto, S., Kosugiyama, H., Takei, K., Sun, J., Kawamura, Y., Shikahama, Y., Ohmori, K., & Watanabe, T. (2016). Impact of image force effect on gate-all-around Schottky barrier tunnel FET. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 [7460424] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460424