Impact of image force effect on gate-all-around Schottky barrier tunnel FET

Shuichiro Hashimoto; Hiroki Kosugiyama; Kohei Takei; Jing Sun; Yuji Kawamura; Yasuhiro Shikahama; Kenji Ohmori; Takanobu Watanabe

doi:10.1109/INEC.2014.7460424

Impact of image force effect on gate-all-around Schottky barrier tunnel FET

Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, Kenji Ohmori, Takanobu Watanabe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.

Original language	English
Title of host publication	2014 IEEE International Nanoelectronics Conference, INEC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460424
Publication status	Published - 2016 Apr 26
Event	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 2014 Jul 28 → 2014 Jul 31

Other

Other	IEEE International Nanoelectronics Conference, INEC 2014
Country	Japan
City	Sapporo
Period	14/7/28 → 14/7/31

Keywords

DIBL
GIBL
Image Force Effect
Schottky Barrier
Tunneling FET

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2014.7460424

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Impact of image force effect on gate-all-around Schottky barrier tunnel FET. / Hashimoto, Shuichiro; Kosugiyama, Hiroki; Takei, Kohei; Sun, Jing; Kawamura, Yuji; Shikahama, Yasuhiro; Ohmori, Kenji; Watanabe, Takanobu.

2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460424.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hashimoto, S, Kosugiyama, H, Takei, K, Sun, J, Kawamura, Y, Shikahama, Y, Ohmori, K & Watanabe, T 2016, Impact of image force effect on gate-all-around Schottky barrier tunnel FET. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460424, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 14/7/28. https://doi.org/10.1109/INEC.2014.7460424

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abstract = "We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.",

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AU - Hashimoto, Shuichiro

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AU - Sun, Jing

AU - Kawamura, Yuji

AU - Shikahama, Yasuhiro

AU - Ohmori, Kenji

AU - Watanabe, Takanobu

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N2 - We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.

AB - We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.

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