Abstract
We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.
Original language | English |
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Title of host publication | 2014 IEEE International Nanoelectronics Conference, INEC 2014 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781479950379 |
DOIs | |
Publication status | Published - 2016 Apr 26 |
Event | IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 2014 Jul 28 → 2014 Jul 31 |
Other
Other | IEEE International Nanoelectronics Conference, INEC 2014 |
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Country/Territory | Japan |
City | Sapporo |
Period | 14/7/28 → 14/7/31 |
Keywords
- DIBL
- GIBL
- Image Force Effect
- Schottky Barrier
- Tunneling FET
ASJC Scopus subject areas
- Electrical and Electronic Engineering