Abstract
We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.
| Original language | English |
|---|---|
| Title of host publication | 2014 IEEE International Nanoelectronics Conference, INEC 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479950379 |
| DOIs | |
| Publication status | Published - 2016 Apr 26 |
| Event | IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 2014 Jul 28 → 2014 Jul 31 |
Other
| Other | IEEE International Nanoelectronics Conference, INEC 2014 |
|---|---|
| Country | Japan |
| City | Sapporo |
| Period | 14/7/28 → 14/7/31 |
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Keywords
- DIBL
- GIBL
- Image Force Effect
- Schottky Barrier
- Tunneling FET
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Impact of image force effect on gate-all-around Schottky barrier tunnel FET. / Hashimoto, Shuichiro; Kosugiyama, Hiroki; Takei, Kohei; Sun, Jing; Kawamura, Yuji; Shikahama, Yasuhiro; Ohmori, Kenji; Watanabe, Takanobu.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460424.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Impact of image force effect on gate-all-around Schottky barrier tunnel FET
AU - Hashimoto, Shuichiro
AU - Kosugiyama, Hiroki
AU - Takei, Kohei
AU - Sun, Jing
AU - Kawamura, Yuji
AU - Shikahama, Yasuhiro
AU - Ohmori, Kenji
AU - Watanabe, Takanobu
PY - 2016/4/26
Y1 - 2016/4/26
N2 - We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.
AB - We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.
KW - DIBL
KW - GIBL
KW - Image Force Effect
KW - Schottky Barrier
KW - Tunneling FET
UR - http://www.scopus.com/inward/record.url?scp=84971291380&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84971291380&partnerID=8YFLogxK
U2 - 10.1109/INEC.2014.7460424
DO - 10.1109/INEC.2014.7460424
M3 - Conference contribution
BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -