Impact of nitrogen implantation on highly reliable sub-quarter-micron metal oxide field-effect transistors (MOSFETs) with lightly doped drain structure

Satoshi Shimizu, Takashi Kuroi, Shigeru Kusunoki, Yoshinori Okumura, Masahide Inuishi, Hirokazu Miyoshi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We studied the effects of nitrogen implantation in the SiO2 sidewall spacer in detail in order to improve in the reliability of lightly doped drain (LDD) metal oxide field-effect transistors (MOSFETs), since the hot carrier degradation of LDD MOSFETs remains one of major issues even in the sub-quarter-micron region. It was found that nitrogen implantation in the SiO2 sidewall spacer can effectively suppress the hot carrier degradation of the LDD structure because the nitrogen atoms are segregated at the interface between the sidewall SiO2 and the Si substrate. This segregation can reduce the generation of interface states or electron traps in the sidewall spacer without causing gate depletion or an increase in gate resistance. Highly reliable sub-quarter-micron LDD N-MOSFETs can be realized using this nitrogen implantation technique.

Original languageEnglish
Pages (from-to)802-806
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb 1

Keywords

  • Electron trap
  • Hot carrier
  • Interface state generation
  • Lightly doped drain structure
  • MOSFET
  • Nitrogen ion implantation
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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