Impact of nitrogen implantation on highly reliable sub-quarter-micron metal oxide field-effect transistors (MOSFETs) with lightly doped drain structure

Satoshi Shimizu*, Takashi Kuroi, Shigeru Kusunoki, Yoshinori Okumura, Masahide Inuishi, Hirokazu Miyoshi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

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