Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance

Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Shigeyasu Uno, Nobuya Mori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    Theoretical investigations are presented for the effects of atomic disorder, which is always present in Si/SiO2 interface, on the device performance for the first time. We show that the drain current is significantly reduced by a factor of 2 due to random configuration of Si atoms near the Si/SiO2 interfaces in a nanowire with 2.7 nm width. NFET is more easily affected by the disorder because of localized states near the conduction-band bottom. Suppression of the atomic disorder is a key to obtain good performance of nanowire FETs.

    Original languageEnglish
    Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
    Pages122-123
    Number of pages2
    Publication statusPublished - 2011
    Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto
    Duration: 2011 Jun 142011 Jun 16

    Other

    Other2011 Symposium on VLSI Technology, VLSIT 2011
    CityKyoto
    Period11/6/1411/6/16

    Fingerprint

    Nanowires
    Transistors
    Oxidation
    Drain current
    Field effect transistors
    Conduction bands
    Atoms

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., Uno, S., & Mori, N. (2011). Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 122-123). [5984670]

    Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance. / Minari, Hideki; Zushi, Tomofumi; Watanabe, Takanobu; Kamakura, Yoshinari; Uno, Shigeyasu; Mori, Nobuya.

    Digest of Technical Papers - Symposium on VLSI Technology. 2011. p. 122-123 5984670.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Minari, H, Zushi, T, Watanabe, T, Kamakura, Y, Uno, S & Mori, N 2011, Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance. in Digest of Technical Papers - Symposium on VLSI Technology., 5984670, pp. 122-123, 2011 Symposium on VLSI Technology, VLSIT 2011, Kyoto, 11/6/14.
    Minari H, Zushi T, Watanabe T, Kamakura Y, Uno S, Mori N. Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance. In Digest of Technical Papers - Symposium on VLSI Technology. 2011. p. 122-123. 5984670
    Minari, Hideki ; Zushi, Tomofumi ; Watanabe, Takanobu ; Kamakura, Yoshinari ; Uno, Shigeyasu ; Mori, Nobuya. / Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance. Digest of Technical Papers - Symposium on VLSI Technology. 2011. pp. 122-123
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