Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance

Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Shigeyasu Uno, Nobuya Mori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Theoretical investigations are presented for the effects of atomic disorder, which is always present in Si/SiO2 interface, on the device performance for the first time. We show that the drain current is significantly reduced by a factor of 2 due to random configuration of Si atoms near the Si/SiO2 interfaces in a nanowire with 2.7 nm width. NFET is more easily affected by the disorder because of localized states near the conduction-band bottom. Suppression of the atomic disorder is a key to obtain good performance of nanowire FETs.

Original languageEnglish
Title of host publication2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages122-123
Number of pages2
Publication statusPublished - 2011 Sep 16
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: 2011 Jun 142011 Jun 16

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2011 Symposium on VLSI Technology, VLSIT 2011
CountryJapan
CityKyoto
Period11/6/1411/6/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., Uno, S., & Mori, N. (2011). Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance. In 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers (pp. 122-123). [5984670] (Digest of Technical Papers - Symposium on VLSI Technology).