Impact of self-heating effect on the electrical characteristics of nanoscale devices

Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.

    Original languageEnglish
    Title of host publicationKey Engineering Materials
    Pages14-19
    Number of pages6
    Volume470
    DOIs
    Publication statusPublished - 2011
    EventInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo
    Duration: 2010 Jun 32010 Jun 5

    Publication series

    NameKey Engineering Materials
    Volume470
    ISSN (Print)10139826

    Other

    OtherInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
    CityTokyo
    Period10/6/310/6/5

    Fingerprint

    Phonons
    Ballistics
    Heating
    Hot electrons
    Heat losses
    Current density
    Simulators
    Acoustics
    Cooling
    Electrons
    Electron Transport
    Temperature

    Keywords

    • Hot phonon
    • Monte Carlo simulation
    • MOSFET
    • Nano
    • Quasi-ballistic transport
    • Self-heating

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Kamakura, Y., Zushi, T., Watanabe, T., Mori, N., & Taniguchi, K. (2011). Impact of self-heating effect on the electrical characteristics of nanoscale devices. In Key Engineering Materials (Vol. 470, pp. 14-19). (Key Engineering Materials; Vol. 470). https://doi.org/10.4028/www.scientific.net/KEM.470.14

    Impact of self-heating effect on the electrical characteristics of nanoscale devices. / Kamakura, Yoshinari; Zushi, Tomofumi; Watanabe, Takanobu; Mori, Nobuya; Taniguchi, Kenji.

    Key Engineering Materials. Vol. 470 2011. p. 14-19 (Key Engineering Materials; Vol. 470).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kamakura, Y, Zushi, T, Watanabe, T, Mori, N & Taniguchi, K 2011, Impact of self-heating effect on the electrical characteristics of nanoscale devices. in Key Engineering Materials. vol. 470, Key Engineering Materials, vol. 470, pp. 14-19, International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE, Tokyo, 10/6/3. https://doi.org/10.4028/www.scientific.net/KEM.470.14
    Kamakura Y, Zushi T, Watanabe T, Mori N, Taniguchi K. Impact of self-heating effect on the electrical characteristics of nanoscale devices. In Key Engineering Materials. Vol. 470. 2011. p. 14-19. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.470.14
    Kamakura, Yoshinari ; Zushi, Tomofumi ; Watanabe, Takanobu ; Mori, Nobuya ; Taniguchi, Kenji. / Impact of self-heating effect on the electrical characteristics of nanoscale devices. Key Engineering Materials. Vol. 470 2011. pp. 14-19 (Key Engineering Materials).
    @inproceedings{a3fbb4af8bf845889fbdee4ca2753465,
    title = "Impact of self-heating effect on the electrical characteristics of nanoscale devices",
    abstract = "Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.",
    keywords = "Hot phonon, Monte Carlo simulation, MOSFET, Nano, Quasi-ballistic transport, Self-heating",
    author = "Yoshinari Kamakura and Tomofumi Zushi and Takanobu Watanabe and Nobuya Mori and Kenji Taniguchi",
    year = "2011",
    doi = "10.4028/www.scientific.net/KEM.470.14",
    language = "English",
    isbn = "9783037850510",
    volume = "470",
    series = "Key Engineering Materials",
    pages = "14--19",
    booktitle = "Key Engineering Materials",

    }

    TY - GEN

    T1 - Impact of self-heating effect on the electrical characteristics of nanoscale devices

    AU - Kamakura, Yoshinari

    AU - Zushi, Tomofumi

    AU - Watanabe, Takanobu

    AU - Mori, Nobuya

    AU - Taniguchi, Kenji

    PY - 2011

    Y1 - 2011

    N2 - Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.

    AB - Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.

    KW - Hot phonon

    KW - Monte Carlo simulation

    KW - MOSFET

    KW - Nano

    KW - Quasi-ballistic transport

    KW - Self-heating

    UR - http://www.scopus.com/inward/record.url?scp=79952768177&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=79952768177&partnerID=8YFLogxK

    U2 - 10.4028/www.scientific.net/KEM.470.14

    DO - 10.4028/www.scientific.net/KEM.470.14

    M3 - Conference contribution

    AN - SCOPUS:79952768177

    SN - 9783037850510

    VL - 470

    T3 - Key Engineering Materials

    SP - 14

    EP - 19

    BT - Key Engineering Materials

    ER -