Impact of self-heating effect on the electrical characteristics of nanoscale devices

Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
PublisherTrans Tech Publications Ltd
Pages14-19
Number of pages6
ISBN (Print)9783037850510
DOIs
Publication statusPublished - 2011 Jan 1

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Hot phonon
  • MOSFET
  • Monte Carlo simulation
  • Nano
  • Quasi-ballistic transport
  • Self-heating

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kamakura, Y., Zushi, T., Watanabe, T., Mori, N., & Taniguchi, K. (2011). Impact of self-heating effect on the electrical characteristics of nanoscale devices. In Technology Evolution for Silicon Nano-Electronics (pp. 14-19). (Key Engineering Materials; Vol. 470). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.470.14