Abstract
A structural transition region near the SiO2/Si interface has been considered to play an important role with respect to gate oxide reliability. We clarify the effects of the structural transition region on the time-dependent dielectric breakdown (TDDB) characteristics, particularly the activation energy of the oxide breakdown for ultrathin gate oxides formed by different oxidation processes, i.e., pyrogenic oxidation, rapid thermal O2 oxidation and N2O oxynitridation. Furthermore, we investigate the properties of the structural transition region, such as the density of SiO2 as measured by the grazing incidence X-ray-scattering reflectivity (GIXR) method, the Si-O-Si bond angle by Fourier-transform infrared attenuated total reflection (FTIR-ATR), the etching rate by chemical etching and X-ray photoelectron spectroscopy (XPS). Through these investigations, it is clarified that the oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (<15°) and that the strain in the structural transition region reduces the barrier to the oxide breakdown. A 1-nm-thick strained layer is found to have a strong effect on the oxide reliability and to limit oxide scaling in future ultra-large-scale integrated circuits (ULSIs).
| Original language | English |
|---|---|
| Pages (from-to) | 4687-4691 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 7 B |
| Publication status | Published - 2000 |
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Keywords
- Activation energy
- Oxide breakdown
- SiO
- Strained layer
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Impact of structural strained layer near SiO2/Si interface on activation energy of time-dependent dielectric breakdown. / Harada, Yoshinao; Eriguchi, Koji; Niwa, Masaaki; Watanabe, Takanobu; Ohdomari, Iwao.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 7 B, 2000, p. 4687-4691.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Impact of structural strained layer near SiO2/Si interface on activation energy of time-dependent dielectric breakdown
AU - Harada, Yoshinao
AU - Eriguchi, Koji
AU - Niwa, Masaaki
AU - Watanabe, Takanobu
AU - Ohdomari, Iwao
PY - 2000
Y1 - 2000
N2 - A structural transition region near the SiO2/Si interface has been considered to play an important role with respect to gate oxide reliability. We clarify the effects of the structural transition region on the time-dependent dielectric breakdown (TDDB) characteristics, particularly the activation energy of the oxide breakdown for ultrathin gate oxides formed by different oxidation processes, i.e., pyrogenic oxidation, rapid thermal O2 oxidation and N2O oxynitridation. Furthermore, we investigate the properties of the structural transition region, such as the density of SiO2 as measured by the grazing incidence X-ray-scattering reflectivity (GIXR) method, the Si-O-Si bond angle by Fourier-transform infrared attenuated total reflection (FTIR-ATR), the etching rate by chemical etching and X-ray photoelectron spectroscopy (XPS). Through these investigations, it is clarified that the oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (<15°) and that the strain in the structural transition region reduces the barrier to the oxide breakdown. A 1-nm-thick strained layer is found to have a strong effect on the oxide reliability and to limit oxide scaling in future ultra-large-scale integrated circuits (ULSIs).
AB - A structural transition region near the SiO2/Si interface has been considered to play an important role with respect to gate oxide reliability. We clarify the effects of the structural transition region on the time-dependent dielectric breakdown (TDDB) characteristics, particularly the activation energy of the oxide breakdown for ultrathin gate oxides formed by different oxidation processes, i.e., pyrogenic oxidation, rapid thermal O2 oxidation and N2O oxynitridation. Furthermore, we investigate the properties of the structural transition region, such as the density of SiO2 as measured by the grazing incidence X-ray-scattering reflectivity (GIXR) method, the Si-O-Si bond angle by Fourier-transform infrared attenuated total reflection (FTIR-ATR), the etching rate by chemical etching and X-ray photoelectron spectroscopy (XPS). Through these investigations, it is clarified that the oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (<15°) and that the strain in the structural transition region reduces the barrier to the oxide breakdown. A 1-nm-thick strained layer is found to have a strong effect on the oxide reliability and to limit oxide scaling in future ultra-large-scale integrated circuits (ULSIs).
KW - Activation energy
KW - Oxide breakdown
KW - SiO
KW - Strained layer
UR - http://www.scopus.com/inward/record.url?scp=0034228521&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034228521&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0034228521
VL - 39
SP - 4687
EP - 4691
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 B
ER -