Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs

S. Shimizu, T. Kuroi, Y. Kawasaki, S. Kusunoki, Y. Okumura, Masahide Inuishi, H. Miyoshi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.

Original languageEnglish
Pages (from-to)859-862
Number of pages4
JournalUnknown Journal
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

Field effect transistors
spacers
proximity
implantation
CMOS
field effect transistors
Nitrogen
nitrogen
nitrogen atoms
Oxides
oxides
Atoms
arsenic
boron
leakage
Hot carriers
degradation
Interface states
impurities
Arsenic

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs. / Shimizu, S.; Kuroi, T.; Kawasaki, Y.; Kusunoki, S.; Okumura, Y.; Inuishi, Masahide; Miyoshi, H.

In: Unknown Journal, 1995, p. 859-862.

Research output: Contribution to journalArticle

@article{0c13a69b3a75484688e69b08a14e0d26,
title = "Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs",
abstract = "We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.",
author = "S. Shimizu and T. Kuroi and Y. Kawasaki and S. Kusunoki and Y. Okumura and Masahide Inuishi and H. Miyoshi",
year = "1995",
language = "English",
pages = "859--862",
journal = "Nuclear Physics A",
issn = "0375-9474",
publisher = "Elsevier",

}

TY - JOUR

T1 - Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs

AU - Shimizu, S.

AU - Kuroi, T.

AU - Kawasaki, Y.

AU - Kusunoki, S.

AU - Okumura, Y.

AU - Inuishi, Masahide

AU - Miyoshi, H.

PY - 1995

Y1 - 1995

N2 - We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.

AB - We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.

UR - http://www.scopus.com/inward/record.url?scp=0029547950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029547950&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029547950

SP - 859

EP - 862

JO - Nuclear Physics A

JF - Nuclear Physics A

SN - 0375-9474

ER -