Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs

S. Shimizu, T. Kuroi, Y. Kawasaki, S. Kusunoki, Y. Okumura, M. Inuishi, H. Miyoshi

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.

Original languageEnglish
Pages (from-to)859-862
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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