Impact of the two traps related leakage mechanism on the tail distribution of DRAM retention characteristics

Shuichi Ueno, Yasuo Inoue, Masahide Inuishi

Research output: Contribution to journalConference articlepeer-review

18 Citations (Scopus)

Abstract

Two traps related leakage mechanism is proposed to explain the tail distribution of the DRAM retention characteristics. The main mode is explained by the trap assisted tunneling with one trap. We propose that the tail mode is created when the two traps are close enough to cooperate for increasing the leakage current. We calculate both the main and the tail distributions with the Monte Carlo method by using one basic equation deduced from our model for the first time.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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