Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate

Hiroki Yamashita, Hiroki Kosugiyama, Yasuhiro Shikahama, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    We have found that the thermal history of the fabrication process of Si nanowires (NWs) has a strong impact on the Ni silicidation rate. We compared the Ni silicidation rates in Si NWs fabricated by two different types of processes: the "Doping First" process, in which dopant activation annealing is completed before the lithography of NW structures, and the "Patterning First" process, in which NWs are firstly fabricated and then subjected to heat treatment entailing thermal oxidation and dopant activation. The Ni silicidation rate was appreciably higher in the Doping First process than in the Patterning First process. The difference is attributed to the residual stress rather than to the dopant concentration in Si-NWs. To control the silicidation rate in NWs, particular attention to the thermal history is necessary.

    Original languageEnglish
    Article number085201
    JournalJapanese Journal of Applied Physics
    Volume53
    Issue number8
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    Nanowires
    nanowires
    histories
    Fabrication
    Doping (additives)
    fabrication
    Chemical activation
    activation
    Lithography
    residual stress
    Hot Temperature
    Residual stresses
    heat treatment
    lithography
    Heat treatment
    Annealing
    Oxidation
    oxidation
    annealing

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate. / Yamashita, Hiroki; Kosugiyama, Hiroki; Shikahama, Yasuhiro; Hashimoto, Shuichiro; Takei, Kohei; Sun, Jing; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu.

    In: Japanese Journal of Applied Physics, Vol. 53, No. 8, 085201, 2014.

    Research output: Contribution to journalArticle

    Yamashita, H, Kosugiyama, H, Shikahama, Y, Hashimoto, S, Takei, K, Sun, J, Matsukawa, T, Masahara, M & Watanabe, T 2014, 'Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate', Japanese Journal of Applied Physics, vol. 53, no. 8, 085201. https://doi.org/10.7567/JJAP.53.085201
    Yamashita, Hiroki ; Kosugiyama, Hiroki ; Shikahama, Yasuhiro ; Hashimoto, Shuichiro ; Takei, Kohei ; Sun, Jing ; Matsukawa, Takashi ; Masahara, Meishoku ; Watanabe, Takanobu. / Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 8.
    @article{a0ee5ac6a033456a970e0d16410dfcb5,
    title = "Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate",
    abstract = "We have found that the thermal history of the fabrication process of Si nanowires (NWs) has a strong impact on the Ni silicidation rate. We compared the Ni silicidation rates in Si NWs fabricated by two different types of processes: the {"}Doping First{"} process, in which dopant activation annealing is completed before the lithography of NW structures, and the {"}Patterning First{"} process, in which NWs are firstly fabricated and then subjected to heat treatment entailing thermal oxidation and dopant activation. The Ni silicidation rate was appreciably higher in the Doping First process than in the Patterning First process. The difference is attributed to the residual stress rather than to the dopant concentration in Si-NWs. To control the silicidation rate in NWs, particular attention to the thermal history is necessary.",
    author = "Hiroki Yamashita and Hiroki Kosugiyama and Yasuhiro Shikahama and Shuichiro Hashimoto and Kohei Takei and Jing Sun and Takashi Matsukawa and Meishoku Masahara and Takanobu Watanabe",
    year = "2014",
    doi = "10.7567/JJAP.53.085201",
    language = "English",
    volume = "53",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "8",

    }

    TY - JOUR

    T1 - Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate

    AU - Yamashita, Hiroki

    AU - Kosugiyama, Hiroki

    AU - Shikahama, Yasuhiro

    AU - Hashimoto, Shuichiro

    AU - Takei, Kohei

    AU - Sun, Jing

    AU - Matsukawa, Takashi

    AU - Masahara, Meishoku

    AU - Watanabe, Takanobu

    PY - 2014

    Y1 - 2014

    N2 - We have found that the thermal history of the fabrication process of Si nanowires (NWs) has a strong impact on the Ni silicidation rate. We compared the Ni silicidation rates in Si NWs fabricated by two different types of processes: the "Doping First" process, in which dopant activation annealing is completed before the lithography of NW structures, and the "Patterning First" process, in which NWs are firstly fabricated and then subjected to heat treatment entailing thermal oxidation and dopant activation. The Ni silicidation rate was appreciably higher in the Doping First process than in the Patterning First process. The difference is attributed to the residual stress rather than to the dopant concentration in Si-NWs. To control the silicidation rate in NWs, particular attention to the thermal history is necessary.

    AB - We have found that the thermal history of the fabrication process of Si nanowires (NWs) has a strong impact on the Ni silicidation rate. We compared the Ni silicidation rates in Si NWs fabricated by two different types of processes: the "Doping First" process, in which dopant activation annealing is completed before the lithography of NW structures, and the "Patterning First" process, in which NWs are firstly fabricated and then subjected to heat treatment entailing thermal oxidation and dopant activation. The Ni silicidation rate was appreciably higher in the Doping First process than in the Patterning First process. The difference is attributed to the residual stress rather than to the dopant concentration in Si-NWs. To control the silicidation rate in NWs, particular attention to the thermal history is necessary.

    UR - http://www.scopus.com/inward/record.url?scp=84905962115&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84905962115&partnerID=8YFLogxK

    U2 - 10.7567/JJAP.53.085201

    DO - 10.7567/JJAP.53.085201

    M3 - Article

    VL - 53

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 8

    M1 - 085201

    ER -