Impact of valence fluctuations on the electronic properties of R O1-x FxBiS2 (R=Ce and Pr)

S. Dash, T. Morita, K. Kurokawa, Y. Matsuzawa, N. L. Saini, N. Yamamoto, Joe Kajitani, R. Higashinaka, T. D. Matsuda, Y. Aoki, Takashi Mizokawa

    Research output: Contribution to journalArticle

    Abstract

    We have investigated the electronic properties of BiS2-based superconductors by using x-ray photoemission spectroscopy (XPS). In going from x=0.3 to 0.5 in PrO1-xFxBiS2, the Pr 3d and Pr 4d peaks are shifted by ∼0.10±0.05 eV from the Fermi level, partially consistent with the electron doping. In PrO1-xFxBiS2, the Pr3+-Pr4+ mixed valence remains unchanged with the electron doping from x=0.3 to 0.5. In CeO1-xFxBiS2, the doped electrons for x=0.5 almost suppress the Ce3+-Ce4+ valence fluctuation. Although the core-level peaks are also shifted by ∼0.10±0.05 eV towards the higher-binding-energy side with the electron doping from x=0 to 0.5 in CeO1-xFxBiS2, the Bi 4f7/2 binding-energy shift is higher in the Pr system compared with the Ce system. The present results suggest that the doped electrons increase orbital occupations in the rare-earth 4f orbitals at the valence band and show valence fluctuations differently in the two systems.

    Original languageEnglish
    Article number144501
    JournalPhysical Review B
    Volume98
    Issue number14
    DOIs
    Publication statusPublished - 2018 Oct 1

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    Electronic properties
    valence
    Electrons
    electronics
    Doping (additives)
    Binding energy
    electrons
    binding energy
    electron orbitals
    Core levels
    occupation
    Photoelectron spectroscopy
    Valence bands
    Fermi level
    photoelectric emission
    rare earth elements
    Rare earths
    Superconducting materials
    orbitals
    shift

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Impact of valence fluctuations on the electronic properties of R O1-x FxBiS2 (R=Ce and Pr). / Dash, S.; Morita, T.; Kurokawa, K.; Matsuzawa, Y.; Saini, N. L.; Yamamoto, N.; Kajitani, Joe; Higashinaka, R.; Matsuda, T. D.; Aoki, Y.; Mizokawa, Takashi.

    In: Physical Review B, Vol. 98, No. 14, 144501, 01.10.2018.

    Research output: Contribution to journalArticle

    Dash, S, Morita, T, Kurokawa, K, Matsuzawa, Y, Saini, NL, Yamamoto, N, Kajitani, J, Higashinaka, R, Matsuda, TD, Aoki, Y & Mizokawa, T 2018, 'Impact of valence fluctuations on the electronic properties of R O1-x FxBiS2 (R=Ce and Pr)', Physical Review B, vol. 98, no. 14, 144501. https://doi.org/10.1103/PhysRevB.98.144501
    Dash S, Morita T, Kurokawa K, Matsuzawa Y, Saini NL, Yamamoto N et al. Impact of valence fluctuations on the electronic properties of R O1-x FxBiS2 (R=Ce and Pr). Physical Review B. 2018 Oct 1;98(14). 144501. https://doi.org/10.1103/PhysRevB.98.144501
    Dash, S. ; Morita, T. ; Kurokawa, K. ; Matsuzawa, Y. ; Saini, N. L. ; Yamamoto, N. ; Kajitani, Joe ; Higashinaka, R. ; Matsuda, T. D. ; Aoki, Y. ; Mizokawa, Takashi. / Impact of valence fluctuations on the electronic properties of R O1-x FxBiS2 (R=Ce and Pr). In: Physical Review B. 2018 ; Vol. 98, No. 14.
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    AU - Kurokawa, K.

    AU - Matsuzawa, Y.

    AU - Saini, N. L.

    AU - Yamamoto, N.

    AU - Kajitani, Joe

    AU - Higashinaka, R.

    AU - Matsuda, T. D.

    AU - Aoki, Y.

    AU - Mizokawa, Takashi

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