TY - JOUR
T1 - Impact of valence fluctuations on the electronic properties of R O1-x FxBiS2 (R=Ce and Pr)
AU - Dash, S.
AU - Morita, T.
AU - Kurokawa, K.
AU - Matsuzawa, Y.
AU - Saini, N. L.
AU - Yamamoto, N.
AU - Kajitani, Joe
AU - Higashinaka, R.
AU - Matsuda, T. D.
AU - Aoki, Y.
AU - Mizokawa, T.
N1 - Funding Information:
We would like to acknowledge Prof. Y. Mizuguchi and Prof. Y. Takano for the fruitful discussion, and Mr. T. Asano and T. Nakajima for the sample preparation. The present work was supported by CREST-JST (Grant No. JPMJCR15Q2) and MEXT/JSPS KAKENHI Grants No. 15H03693, No. 15H05884, No. 16J05692, and No. 16K05454.
Funding Information:
We would like to acknowledge Prof. Y. Mizuguchi and Prof. Y. Takano for the fruitful discussion, and Mr. T. Asano and T. Nakajima for the sample preparation. The present work was supported by CREST-JST (Grant No. JPMJCR15Q2) and MEXT/JSPS KAKENHI Grants No. 15H03693, No. 15H05884, No. 16J05692, and No. 16K05454.
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - We have investigated the electronic properties of BiS2-based superconductors by using x-ray photoemission spectroscopy (XPS). In going from x=0.3 to 0.5 in PrO1-xFxBiS2, the Pr 3d and Pr 4d peaks are shifted by ∼0.10±0.05 eV from the Fermi level, partially consistent with the electron doping. In PrO1-xFxBiS2, the Pr3+-Pr4+ mixed valence remains unchanged with the electron doping from x=0.3 to 0.5. In CeO1-xFxBiS2, the doped electrons for x=0.5 almost suppress the Ce3+-Ce4+ valence fluctuation. Although the core-level peaks are also shifted by ∼0.10±0.05 eV towards the higher-binding-energy side with the electron doping from x=0 to 0.5 in CeO1-xFxBiS2, the Bi 4f7/2 binding-energy shift is higher in the Pr system compared with the Ce system. The present results suggest that the doped electrons increase orbital occupations in the rare-earth 4f orbitals at the valence band and show valence fluctuations differently in the two systems.
AB - We have investigated the electronic properties of BiS2-based superconductors by using x-ray photoemission spectroscopy (XPS). In going from x=0.3 to 0.5 in PrO1-xFxBiS2, the Pr 3d and Pr 4d peaks are shifted by ∼0.10±0.05 eV from the Fermi level, partially consistent with the electron doping. In PrO1-xFxBiS2, the Pr3+-Pr4+ mixed valence remains unchanged with the electron doping from x=0.3 to 0.5. In CeO1-xFxBiS2, the doped electrons for x=0.5 almost suppress the Ce3+-Ce4+ valence fluctuation. Although the core-level peaks are also shifted by ∼0.10±0.05 eV towards the higher-binding-energy side with the electron doping from x=0 to 0.5 in CeO1-xFxBiS2, the Bi 4f7/2 binding-energy shift is higher in the Pr system compared with the Ce system. The present results suggest that the doped electrons increase orbital occupations in the rare-earth 4f orbitals at the valence band and show valence fluctuations differently in the two systems.
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U2 - 10.1103/PhysRevB.98.144501
DO - 10.1103/PhysRevB.98.144501
M3 - Article
AN - SCOPUS:85054586891
SN - 2469-9950
VL - 98
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 14
M1 - 144501
ER -