Impacts of strained SiO 2 on TDDB lifetime projection

Yoshinao Harada, Koji Eriguchi, Masaaki Niwa, Takanobu Watanabe, Iwao Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We clarify the effects of the strained-SiO 2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO 2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO 2/Si system.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherIEEE
Pages216-217
Number of pages2
Publication statusPublished - 2000
Externally publishedYes
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 2000 Jun 132000 Jun 15

Other

Other2000 Symposium on VLSI Technology
CityHonolulu, HI, USA
Period00/6/1300/6/15

Fingerprint

Electric breakdown
Oxides
Activation energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Harada, Y., Eriguchi, K., Niwa, M., Watanabe, T., & Ohdomari, I. (2000). Impacts of strained SiO 2 on TDDB lifetime projection In Digest of Technical Papers - Symposium on VLSI Technology (pp. 216-217). IEEE.

Impacts of strained SiO 2 on TDDB lifetime projection . / Harada, Yoshinao; Eriguchi, Koji; Niwa, Masaaki; Watanabe, Takanobu; Ohdomari, Iwao.

Digest of Technical Papers - Symposium on VLSI Technology. IEEE, 2000. p. 216-217.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harada, Y, Eriguchi, K, Niwa, M, Watanabe, T & Ohdomari, I 2000, Impacts of strained SiO 2 on TDDB lifetime projection in Digest of Technical Papers - Symposium on VLSI Technology. IEEE, pp. 216-217, 2000 Symposium on VLSI Technology, Honolulu, HI, USA, 00/6/13.
Harada Y, Eriguchi K, Niwa M, Watanabe T, Ohdomari I. Impacts of strained SiO 2 on TDDB lifetime projection In Digest of Technical Papers - Symposium on VLSI Technology. IEEE. 2000. p. 216-217
Harada, Yoshinao ; Eriguchi, Koji ; Niwa, Masaaki ; Watanabe, Takanobu ; Ohdomari, Iwao. / Impacts of strained SiO 2 on TDDB lifetime projection Digest of Technical Papers - Symposium on VLSI Technology. IEEE, 2000. pp. 216-217
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