Impacts of strained SiO2 on TDDB lifetime projection

Yoshinao Harada; Koji Eriguchi; Masaaki Niwa; Takanobu Watanabe; Iwao Ohdomari

Impacts of strained SiO₂ on TDDB lifetime projection

Yoshinao Harada^*, Koji Eriguchi, Masaaki Niwa, Takanobu Watanabe, Iwao Ohdomari

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

We clarify the effects of the strained-SiO₂ on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO₂ changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T_bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO₂/Si system.

Original language	English
Pages (from-to)	216-217
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 2000 Jan 1
Externally published	Yes
Event	2000 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 2000 Jun 13 → 2000 Jun 15

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Impacts of strained SiO2 on TDDB lifetime projection",

abstract = "We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.",

author = "Yoshinao Harada and Koji Eriguchi and Masaaki Niwa and Takanobu Watanabe and Iwao Ohdomari",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "216--217",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 Symposium on VLSI Technology ; Conference date: 13-06-2000 Through 15-06-2000",

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TY - JOUR

T1 - Impacts of strained SiO2 on TDDB lifetime projection

AU - Harada, Yoshinao

AU - Eriguchi, Koji

AU - Niwa, Masaaki

AU - Watanabe, Takanobu

AU - Ohdomari, Iwao

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.

AB - We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.

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M3 - Conference article

AN - SCOPUS:0033725595

SN - 0743-1562

SP - 216

EP - 217

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2000 Symposium on VLSI Technology

Y2 - 13 June 2000 through 15 June 2000

ER -

Impacts of strained SiO₂ on TDDB lifetime projection

Abstract

ASJC Scopus subject areas

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