Impacts of strained SiO2 on TDDB lifetime projection

Yoshinao Harada*, Koji Eriguchi, Masaaki Niwa, Takanobu Watanabe, Iwao Ohdomari

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.

Original languageEnglish
Pages (from-to)216-217
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2000 Jan 1
Externally publishedYes
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 2000 Jun 132000 Jun 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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