Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.

Original languageEnglish
Title of host publicationMaterials and Physics of Emerging Nonvolatile Memories
Pages153-158
Number of pages6
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2012 Apr 92012 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1430
ISSN (Print)0272-9172

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period12/4/912/4/13

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Tsuruoka, T., Hasegawa, T., Terabe, K., & Aono, M. (2012). Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch. In Materials and Physics of Emerging Nonvolatile Memories (pp. 153-158). (Materials Research Society Symposium Proceedings; Vol. 1430). https://doi.org/10.1557/opl.2012.901