Improved bi-layer lift-off process for MEMS applications

Jinxing Liang, Fusao Kohsaka, Takahiro Matsuo, Xuefeng Li, Toshitsugu Ueda

    Research output: Contribution to journalArticle

    19 Citations (Scopus)

    Abstract

    Conventional lift-off process is designed for defining very fine pattern or removing metals hard to etch and the process is limited to surface microfabrication due to the requirement on directional deposition. We improved the process for the step coverage requirement in 3-D MEMS. A novel bi-layer (top image resist Shipley S1808 and bottom lift-off resist Microchem LOR) lift-off process was built up for patterning 3-D devices. Resists were coated and patterned with an overhang profile on a substrate before the substrate was etched. The key feature of the new lift-off process is to create a resist undercut profile, which is deep enough to reduce step coverage and durable to aggressive substrate etchant. The two-step development method was effective for patterning 3-D microdevices with high aspect ratio trench or through-holes. The development time of the resist profile was optimized. Fine pattern of 2 μm/5 μm (line/space) was achieved on quartz microstructure with high aspect ratio (2.7) trench.

    Original languageEnglish
    Pages (from-to)1000-1003
    Number of pages4
    JournalMicroelectronic Engineering
    Volume85
    Issue number5-6
    DOIs
    Publication statusPublished - 2008 May

    Keywords

    • 3-D patterning
    • Lift-off
    • MEMS
    • Two-step development method
    • Undercut

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films
    • Atomic and Molecular Physics, and Optics

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  • Cite this

    Liang, J., Kohsaka, F., Matsuo, T., Li, X., & Ueda, T. (2008). Improved bi-layer lift-off process for MEMS applications. Microelectronic Engineering, 85(5-6), 1000-1003. https://doi.org/10.1016/j.mee.2008.01.104