Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model

Hong Hsin Lai, Chao Chih Hsiao, Chin Wei Kuo, Yi Jen Chan, Takuro Sato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A modified 0.35 μm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.

Original languageEnglish
Pages (from-to)76-80
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE87-C
Issue number1
Publication statusPublished - 2004 Jan
Externally publishedYes

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Microwaves
Microwave devices

Keywords

  • CMOS
  • Linearity improvement
  • Microwave large-signal model

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Networks and Communications

Cite this

Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model. / Lai, Hong Hsin; Hsiao, Chao Chih; Kuo, Chin Wei; Chan, Yi Jen; Sato, Takuro.

In: IEICE Transactions on Electronics, Vol. E87-C, No. 1, 01.2004, p. 76-80.

Research output: Contribution to journalArticle

Lai, Hong Hsin ; Hsiao, Chao Chih ; Kuo, Chin Wei ; Chan, Yi Jen ; Sato, Takuro. / Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model. In: IEICE Transactions on Electronics. 2004 ; Vol. E87-C, No. 1. pp. 76-80.
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