Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment

Tatsushi Kaneda; Jun Mizuno; Akiko Okada; Kaori Matsunaga; Shuichi Shoji; Mikiko Saito; Hiroshi Nishikawa

doi:10.1109/ICEP-IAAC.2015.7111061

Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment

Tatsushi Kaneda, Jun Mizuno, Akiko Okada, Kaori Matsunaga, Shuichi Shoji, Mikiko Saito, Hiroshi Nishikawa

Research Organization for Nano & Life Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper describes a novel low temperature Au-Au bonding method using nanoporous Au-Ag powder and vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O<inf>3</inf>) pre-treatment. The nanoporous powder, which was fabricated by dealloying Ag-Au alloy sheet, was used to form the bump structure on the Au substrate by simple filing process, while an Au-coated Si substrate was used as the chip. The VUV/O<inf>3</inf> treated bumps and chip was bonded under a bonding pressure of 20 MPa at 200 °C for 20 min in a vacuum atmosphere of 1 kPa. A ligament size of the nanoporous structure on powder surface was found to be grown dramatically during bonding process. The tensile strength reached 10.1 MPa which is 2.3 times higher than that without VUV/O<inf>3</inf> treatment. This suggests that organic contaminants on the each ligament surface were effectively removed by VUV/O<inf>3</inf> treatment, and consequently, the diffusion of gold atoms in the nanoporous powder was significantly promoted to change into bulk structure. The proposed method will be highly a promising method for 3D-LSI and MEMS packaging.

Original language	English
Title of host publication	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	473-477
Number of pages	5
ISBN (Print)	9784904090138
DOIs	https://doi.org/10.1109/ICEP-IAAC.2015.7111061
Publication status	Published - 2015 May 20
Event	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan Duration: 2015 Apr 14 → 2015 Apr 17

Other

Other	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Country/Territory	Japan
City	Kyoto
Period	15/4/14 → 15/4/17

Keywords

Flip chip bonding
low temperature bonding
nanoporous powder
VUV/O<inf>3</inf> treatment

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICEP-IAAC.2015.7111061

Cite this

Kaneda, T., Mizuno, J., Okada, A., Matsunaga, K., Shoji, S., Saito, M., & Nishikawa, H. (2015). Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 473-477). [7111061] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111061

Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment. / Kaneda, Tatsushi; Mizuno, Jun; Okada, Akiko et al.

ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 473-477 7111061.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaneda, T, Mizuno, J, Okada, A, Matsunaga, K, Shoji, S , Saito, M & Nishikawa, H 2015, Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111061, Institute of Electrical and Electronics Engineers Inc., pp. 473-477, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 15/4/14. https://doi.org/10.1109/ICEP-IAAC.2015.7111061

Kaneda T, Mizuno J, Okada A, Matsunaga K, Shoji S , Saito M et al. Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 473-477. 7111061 doi: 10.1109/ICEP-IAAC.2015.7111061

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title = "Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment",

abstract = "This paper describes a novel low temperature Au-Au bonding method using nanoporous Au-Ag powder and vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3) pre-treatment. The nanoporous powder, which was fabricated by dealloying Ag-Au alloy sheet, was used to form the bump structure on the Au substrate by simple filing process, while an Au-coated Si substrate was used as the chip. The VUV/O3 treated bumps and chip was bonded under a bonding pressure of 20 MPa at 200 °C for 20 min in a vacuum atmosphere of 1 kPa. A ligament size of the nanoporous structure on powder surface was found to be grown dramatically during bonding process. The tensile strength reached 10.1 MPa which is 2.3 times higher than that without VUV/O3 treatment. This suggests that organic contaminants on the each ligament surface were effectively removed by VUV/O3 treatment, and consequently, the diffusion of gold atoms in the nanoporous powder was significantly promoted to change into bulk structure. The proposed method will be highly a promising method for 3D-LSI and MEMS packaging.",

keywords = "Flip chip bonding, low temperature bonding, nanoporous powder, VUV/O<inf>3</inf> treatment",

author = "Tatsushi Kaneda and Jun Mizuno and Akiko Okada and Kaori Matsunaga and Shuichi Shoji and Mikiko Saito and Hiroshi Nishikawa",

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AU - Kaneda, Tatsushi

AU - Mizuno, Jun

AU - Okada, Akiko

AU - Matsunaga, Kaori

AU - Shoji, Shuichi

AU - Saito, Mikiko

AU - Nishikawa, Hiroshi

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N2 - This paper describes a novel low temperature Au-Au bonding method using nanoporous Au-Ag powder and vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3) pre-treatment. The nanoporous powder, which was fabricated by dealloying Ag-Au alloy sheet, was used to form the bump structure on the Au substrate by simple filing process, while an Au-coated Si substrate was used as the chip. The VUV/O3 treated bumps and chip was bonded under a bonding pressure of 20 MPa at 200 °C for 20 min in a vacuum atmosphere of 1 kPa. A ligament size of the nanoporous structure on powder surface was found to be grown dramatically during bonding process. The tensile strength reached 10.1 MPa which is 2.3 times higher than that without VUV/O3 treatment. This suggests that organic contaminants on the each ligament surface were effectively removed by VUV/O3 treatment, and consequently, the diffusion of gold atoms in the nanoporous powder was significantly promoted to change into bulk structure. The proposed method will be highly a promising method for 3D-LSI and MEMS packaging.

AB - This paper describes a novel low temperature Au-Au bonding method using nanoporous Au-Ag powder and vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3) pre-treatment. The nanoporous powder, which was fabricated by dealloying Ag-Au alloy sheet, was used to form the bump structure on the Au substrate by simple filing process, while an Au-coated Si substrate was used as the chip. The VUV/O3 treated bumps and chip was bonded under a bonding pressure of 20 MPa at 200 °C for 20 min in a vacuum atmosphere of 1 kPa. A ligament size of the nanoporous structure on powder surface was found to be grown dramatically during bonding process. The tensile strength reached 10.1 MPa which is 2.3 times higher than that without VUV/O3 treatment. This suggests that organic contaminants on the each ligament surface were effectively removed by VUV/O3 treatment, and consequently, the diffusion of gold atoms in the nanoporous powder was significantly promoted to change into bulk structure. The proposed method will be highly a promising method for 3D-LSI and MEMS packaging.

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KW - low temperature bonding

KW - nanoporous powder

KW - VUV/O<inf>3</inf> treatment

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Improved low temperature gold-gold bonding using nanoporous powder bump using vacuum ultraviolet irradiation pre-treatment

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