Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process

H. Miyazaki, H. Kojima, A. Hiraiwa, Y. Homma, K. Murakami

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.

Original languageEnglish
Pages (from-to)734-736
Number of pages3
JournalJournal of the Electrochemical Society
Volume141
Issue number3
Publication statusPublished - 1994 Mar
Externally publishedYes

Fingerprint

Rapid thermal annealing
Passivation
passivity
contamination
Contamination
Glass
annealing
glass
metal oxide semiconductors
budgets
MOS devices
semiconductor devices
integrated circuits
furnaces
Integrated circuits
Furnaces
Metals
Annealing
Hot Temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process. / Miyazaki, H.; Kojima, H.; Hiraiwa, A.; Homma, Y.; Murakami, K.

In: Journal of the Electrochemical Society, Vol. 141, No. 3, 03.1994, p. 734-736.

Research output: Contribution to journalArticle

Miyazaki, H, Kojima, H, Hiraiwa, A, Homma, Y & Murakami, K 1994, 'Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process', Journal of the Electrochemical Society, vol. 141, no. 3, pp. 734-736.
Miyazaki, H. ; Kojima, H. ; Hiraiwa, A. ; Homma, Y. ; Murakami, K. / Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process. In: Journal of the Electrochemical Society. 1994 ; Vol. 141, No. 3. pp. 734-736.
@article{375ad2b101eb4f728ac82842484641dc,
title = "Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process",
abstract = "passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.",
author = "H. Miyazaki and H. Kojima and A. Hiraiwa and Y. Homma and K. Murakami",
year = "1994",
month = "3",
language = "English",
volume = "141",
pages = "734--736",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

TY - JOUR

T1 - Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process

AU - Miyazaki, H.

AU - Kojima, H.

AU - Hiraiwa, A.

AU - Homma, Y.

AU - Murakami, K.

PY - 1994/3

Y1 - 1994/3

N2 - passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.

AB - passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.

UR - http://www.scopus.com/inward/record.url?scp=0028385999&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028385999&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0028385999

VL - 141

SP - 734

EP - 736

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 3

ER -