Abstract
passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.
| Original language | English |
|---|---|
| Pages (from-to) | 734-736 |
| Number of pages | 3 |
| Journal | Journal of the Electrochemical Society |
| Volume | 141 |
| Issue number | 3 |
| Publication status | Published - 1994 Mar |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces