Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process

H. Miyazaki, H. Kojima, A. Hiraiwa, Y. Homma, K. Murakami

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.

Original languageEnglish
Pages (from-to)734-736
Number of pages3
JournalJournal of the Electrochemical Society
Volume141
Issue number3
Publication statusPublished - 1994 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process'. Together they form a unique fingerprint.

  • Cite this