Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

T. Koida, S. F. Chichibu, Takayuki Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura

    Research output: Contribution to journalArticle

    57 Citations (Scopus)

    Abstract

    The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (112̄o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.

    Original languageEnglish
    Pages (from-to)3768-3770
    Number of pages3
    JournalApplied Physics Letters
    Volume84
    Issue number19
    DOIs
    Publication statusPublished - 2004 May 10

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    quantum efficiency
    quantum wells
    photoluminescence
    Stark effect
    templates
    reflectance
    life (durability)
    shift
    polarization
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth. / Koida, T.; Chichibu, S. F.; Sota, Takayuki; Craven, M. D.; Haskell, B. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    In: Applied Physics Letters, Vol. 84, No. 19, 10.05.2004, p. 3768-3770.

    Research output: Contribution to journalArticle

    Koida, T, Chichibu, SF, Sota, T, Craven, MD, Haskell, BA, Speck, JS, DenBaars, SP & Nakamura, S 2004, 'Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth', Applied Physics Letters, vol. 84, no. 19, pp. 3768-3770. https://doi.org/10.1063/1.1738185
    Koida, T. ; Chichibu, S. F. ; Sota, Takayuki ; Craven, M. D. ; Haskell, B. A. ; Speck, J. S. ; DenBaars, S. P. ; Nakamura, S. / Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth. In: Applied Physics Letters. 2004 ; Vol. 84, No. 19. pp. 3768-3770.
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    AU - Chichibu, S. F.

    AU - Sota, Takayuki

    AU - Craven, M. D.

    AU - Haskell, B. A.

    AU - Speck, J. S.

    AU - DenBaars, S. P.

    AU - Nakamura, S.

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