Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

T. Koida, S. F. Chichibu*, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)

Abstract

The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (112̄o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.

Original languageEnglish
Pages (from-to)3768-3770
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
Publication statusPublished - 2004 May 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth'. Together they form a unique fingerprint.

Cite this