Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (112̄o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.

Original languageEnglish
Pages (from-to)3768-3770
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
Publication statusPublished - 2004 May 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth'. Together they form a unique fingerprint.

  • Cite this

    Koida, T., Chichibu, S. F., Sota, T., Craven, M. D., Haskell, B. A., Speck, J. S., DenBaars, S. P., & Nakamura, S. (2004). Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth. Applied Physics Letters, 84(19), 3768-3770. https://doi.org/10.1063/1.1738185