IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS.

Misuzu Yoshizawa, Kazuhisa Uomi, Akio Ohishi, Yuuichi Ono, Toshihiro Kawano, Keiichi Nakashima, Takashi Kajimura

Research output: Chapter in Book/Report/Conference proceedingChapter

13 Citations (Scopus)

Abstract

An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mw in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages1465-1467
Number of pages3
Volume26
Edition9
Publication statusPublished - 1987 Sep
Externally publishedYes

Fingerprint

High power lasers
Metallorganic chemical vapor deposition
Oxide films
Lasers
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yoshizawa, M., Uomi, K., Ohishi, A., Ono, Y., Kawano, T., Nakashima, K., & Kajimura, T. (1987). IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS. In Japanese Journal of Applied Physics, Part 2: Letters (9 ed., Vol. 26, pp. 1465-1467)

IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS. / Yoshizawa, Misuzu; Uomi, Kazuhisa; Ohishi, Akio; Ono, Yuuichi; Kawano, Toshihiro; Nakashima, Keiichi; Kajimura, Takashi.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 26 9. ed. 1987. p. 1465-1467.

Research output: Chapter in Book/Report/Conference proceedingChapter

Yoshizawa, M, Uomi, K, Ohishi, A, Ono, Y, Kawano, T, Nakashima, K & Kajimura, T 1987, IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS. in Japanese Journal of Applied Physics, Part 2: Letters. 9 edn, vol. 26, pp. 1465-1467.
Yoshizawa M, Uomi K, Ohishi A, Ono Y, Kawano T, Nakashima K et al. IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS. In Japanese Journal of Applied Physics, Part 2: Letters. 9 ed. Vol. 26. 1987. p. 1465-1467
Yoshizawa, Misuzu ; Uomi, Kazuhisa ; Ohishi, Akio ; Ono, Yuuichi ; Kawano, Toshihiro ; Nakashima, Keiichi ; Kajimura, Takashi. / IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 26 9. ed. 1987. pp. 1465-1467
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