Improved self-aligned structure for gaalas high-power lasers

Misuzu Yoshizawa, Kazuhisa Uomi, Akio Ohishi, Yuuichi Ono, Toshihiro Kawano, Keiichi Nakashima, Takashi Kajimura

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mW in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.

Original languageEnglish
Pages (from-to)1465-1467
Number of pages3
JournalJapanese journal of applied physics
Volume26
Issue number9A
DOIs
Publication statusPublished - 1987 Sep

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Yoshizawa, M., Uomi, K., Ohishi, A., Ono, Y., Kawano, T., Nakashima, K., & Kajimura, T. (1987). Improved self-aligned structure for gaalas high-power lasers. Japanese journal of applied physics, 26(9A), 1465-1467. https://doi.org/10.1143/JJAP.26.L1465