Improvement in chemical-vapor-deposited-SiO2 film properties by annealing with UV-light-excited ozone

Tetsuya Nishiguchi, Shigeru Saito, Naoto Kameda, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ultraviolet-enhanced, highly concentrated (>90vol%) ozone gas annealing was carried out at 200 °C to fabricate as-deposited tetraethoxysilane chemical vapor deposited SiO2 film (TEOS-CVD films) applicable as a gate dielectric material for thin-film transistors. As a result of this annealing, the leakage current density, fixed charge density, and dielectric constant of the films decreased to those of thermally grown silicon oxide. The relative dielectric constant, for example, was reduced from 5.4 to 4.0. The films' resistance to wet-etching solution was also improved, particularly within the region located 3-5 nm from the films' surface. In the region, the reduction in the amount of the excess positive charges of Si and the increase in the density of an ideal Si-O bonding network were confirmed from X-ray photoelectron spectroscopy measurements. These results suggest that oxygen atoms are incorporated into the film, while impurities contained in the film such as OH are out gassed by the diffusion of oxygen atoms generated from the photo dissociation of ozone in the gas phase. The annealing effects with and without oxygen atom supply were compared and the mechanism of the annealing is discussed.

Original languageEnglish
Article number116509
JournalJapanese Journal of Applied Physics
Volume48
Issue number11
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes

Fingerprint

Ultraviolet radiation
Ozone
ozone
Vapors
Annealing
vapors
annealing
oxygen atoms
Atoms
Oxygen
Permittivity
permittivity
Photodissociation
Wet etching
Gate dielectrics
Silicon oxides
Thin film transistors
Charge density
silicon oxides
Gases

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Improvement in chemical-vapor-deposited-SiO2 film properties by annealing with UV-light-excited ozone. / Nishiguchi, Tetsuya; Saito, Shigeru; Kameda, Naoto; Kekura, Mitsuru; Nonaka, Hidehiko; Ichimura, Shingo.

In: Japanese Journal of Applied Physics, Vol. 48, No. 11, 116509, 01.12.2009.

Research output: Contribution to journalArticle

Nishiguchi, Tetsuya ; Saito, Shigeru ; Kameda, Naoto ; Kekura, Mitsuru ; Nonaka, Hidehiko ; Ichimura, Shingo. / Improvement in chemical-vapor-deposited-SiO2 film properties by annealing with UV-light-excited ozone. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 11.
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