Abstract
Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C-V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.
| Original language | English |
|---|---|
| Article number | 019 |
| Pages (from-to) | 6009-6016 |
| Number of pages | 8 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 18 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 2006 Jul 5 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Improvement in electrical properties of hafnium and zirconium silicates by postnitriding. / Ito, T.; Kato, H.; Nango, T.; Ohki, Yoshimichi.
In: Journal of Physics Condensed Matter, Vol. 18, No. 26, 019, 05.07.2006, p. 6009-6016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improvement in electrical properties of hafnium and zirconium silicates by postnitriding
AU - Ito, T.
AU - Kato, H.
AU - Nango, T.
AU - Ohki, Yoshimichi
PY - 2006/7/5
Y1 - 2006/7/5
N2 - Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C-V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.
AB - Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C-V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=33745302788&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33745302788&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/18/26/019
DO - 10.1088/0953-8984/18/26/019
M3 - Article
C2 - 21690815
AN - SCOPUS:33745302788
VL - 18
SP - 6009
EP - 6016
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 26
M1 - 019
ER -