Improvement in electrical properties of hafnium and zirconium silicates by postnitriding

T. Ito, H. Kato, T. Nango, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C-V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.

    Original languageEnglish
    Article number019
    Pages (from-to)6009-6016
    Number of pages8
    JournalJournal of Physics Condensed Matter
    Volume18
    Issue number26
    DOIs
    Publication statusPublished - 2006 Jul 5

    Fingerprint

    Hafnium
    hafnium
    Zirconium
    Silicates
    silicates
    Electric properties
    electrical properties
    Leakage currents
    Hysteresis
    Nitric Oxide
    leakage
    Capacitance
    capacitance
    hysteresis
    Electron spin resonance spectroscopy
    Nitrogen
    nitrogen
    Defects
    defects
    Electric potential

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Improvement in electrical properties of hafnium and zirconium silicates by postnitriding. / Ito, T.; Kato, H.; Nango, T.; Ohki, Yoshimichi.

    In: Journal of Physics Condensed Matter, Vol. 18, No. 26, 019, 05.07.2006, p. 6009-6016.

    Research output: Contribution to journalArticle

    @article{8c7be166b5c8466cba623d580243f065,
    title = "Improvement in electrical properties of hafnium and zirconium silicates by postnitriding",
    abstract = "Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C-V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.",
    author = "T. Ito and H. Kato and T. Nango and Yoshimichi Ohki",
    year = "2006",
    month = "7",
    day = "5",
    doi = "10.1088/0953-8984/18/26/019",
    language = "English",
    volume = "18",
    pages = "6009--6016",
    journal = "Journal of Physics Condensed Matter",
    issn = "0953-8984",
    publisher = "IOP Publishing Ltd.",
    number = "26",

    }

    TY - JOUR

    T1 - Improvement in electrical properties of hafnium and zirconium silicates by postnitriding

    AU - Ito, T.

    AU - Kato, H.

    AU - Nango, T.

    AU - Ohki, Yoshimichi

    PY - 2006/7/5

    Y1 - 2006/7/5

    N2 - Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C-V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.

    AB - Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C-V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.

    UR - http://www.scopus.com/inward/record.url?scp=33745302788&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33745302788&partnerID=8YFLogxK

    U2 - 10.1088/0953-8984/18/26/019

    DO - 10.1088/0953-8984/18/26/019

    M3 - Article

    C2 - 21690815

    AN - SCOPUS:33745302788

    VL - 18

    SP - 6009

    EP - 6016

    JO - Journal of Physics Condensed Matter

    JF - Journal of Physics Condensed Matter

    SN - 0953-8984

    IS - 26

    M1 - 019

    ER -