Abstract
We investigated the effect of rapid thermal annealing from 700 °C to 950 °C on stacked InAs/GaAs quantum dots (QDs) covered with GaAs and In0.19Ga0.81As layers. Large blue-shift of the energy positions nearly 380 meV (1187 nm to 870 nm) have been observed in InGaAs capped samples together with improvement in the photoluminescence integrated intensity of more than five times. The strong narrowing of the photoluminescence line-width in both GaAs (as narrow as 8 meV) and InGaAs capped samples show an improvement of the size distribution of the QDs. In addition, a significant reduction of the energy spacing (ΔE2-1) between ground state and first excited state emissions were found in both GaAs and InGaAs capped quantum dots due to interface inter-diffusion induced by thermal treatment. The excited state filling experiments for InGaAs capped sample annealed at 950 °C exhibits quantum well like behavior where as, the GaAs capped sample shows a shoulder in high energy side might be due to first excited state of QDs.
| Original language | English |
|---|---|
| Pages (from-to) | 725-728 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 246 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Apr |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Improvement in size distribution and optical properties of InAs/GaAs QDs by post growth thermal treatment. / Saravanan, Shanmugam; Harayama, Takahisa.
In: Physica Status Solidi (B) Basic Research, Vol. 246, No. 4, 04.2009, p. 725-728.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improvement in size distribution and optical properties of InAs/GaAs QDs by post growth thermal treatment
AU - Saravanan, Shanmugam
AU - Harayama, Takahisa
PY - 2009/4
Y1 - 2009/4
N2 - We investigated the effect of rapid thermal annealing from 700 °C to 950 °C on stacked InAs/GaAs quantum dots (QDs) covered with GaAs and In0.19Ga0.81As layers. Large blue-shift of the energy positions nearly 380 meV (1187 nm to 870 nm) have been observed in InGaAs capped samples together with improvement in the photoluminescence integrated intensity of more than five times. The strong narrowing of the photoluminescence line-width in both GaAs (as narrow as 8 meV) and InGaAs capped samples show an improvement of the size distribution of the QDs. In addition, a significant reduction of the energy spacing (ΔE2-1) between ground state and first excited state emissions were found in both GaAs and InGaAs capped quantum dots due to interface inter-diffusion induced by thermal treatment. The excited state filling experiments for InGaAs capped sample annealed at 950 °C exhibits quantum well like behavior where as, the GaAs capped sample shows a shoulder in high energy side might be due to first excited state of QDs.
AB - We investigated the effect of rapid thermal annealing from 700 °C to 950 °C on stacked InAs/GaAs quantum dots (QDs) covered with GaAs and In0.19Ga0.81As layers. Large blue-shift of the energy positions nearly 380 meV (1187 nm to 870 nm) have been observed in InGaAs capped samples together with improvement in the photoluminescence integrated intensity of more than five times. The strong narrowing of the photoluminescence line-width in both GaAs (as narrow as 8 meV) and InGaAs capped samples show an improvement of the size distribution of the QDs. In addition, a significant reduction of the energy spacing (ΔE2-1) between ground state and first excited state emissions were found in both GaAs and InGaAs capped quantum dots due to interface inter-diffusion induced by thermal treatment. The excited state filling experiments for InGaAs capped sample annealed at 950 °C exhibits quantum well like behavior where as, the GaAs capped sample shows a shoulder in high energy side might be due to first excited state of QDs.
UR - http://www.scopus.com/inward/record.url?scp=70449427456&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70449427456&partnerID=8YFLogxK
U2 - 10.1002/pssb.200880590
DO - 10.1002/pssb.200880590
M3 - Article
AN - SCOPUS:70449427456
VL - 246
SP - 725
EP - 728
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 4
ER -