Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures

Narihiko Maeda, Masanobu Hiroki, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.

Original languageEnglish
Pages (from-to)S1049-S1052
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue numberSUPPL. 2
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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