Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures

Narihiko Maeda, Masanobu Hiroki, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.

Original languageEnglish
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue numberSUPPL. 2
DOIs
Publication statusPublished - 2009 Jul
Externally publishedYes

Fingerprint

MIS (semiconductors)
field effect transistors
insulators
transconductance
barrier layers
leakage
capacitance
direct current
electrical properties

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures. / Maeda, Narihiko; Hiroki, Masanobu; Makimoto, Toshiki; Enoki, Takatomo; Kobayashi, Takashi.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. SUPPL. 2, 07.2009.

Research output: Contribution to journalArticle

@article{779e963433a04298af6228f4926751fb,
title = "Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures",
abstract = "To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.",
author = "Narihiko Maeda and Masanobu Hiroki and Toshiki Makimoto and Takatomo Enoki and Takashi Kobayashi",
year = "2009",
month = "7",
doi = "10.1002/pssc.200880931",
language = "English",
volume = "6",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "SUPPL. 2",

}

TY - JOUR

T1 - Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures

AU - Maeda, Narihiko

AU - Hiroki, Masanobu

AU - Makimoto, Toshiki

AU - Enoki, Takatomo

AU - Kobayashi, Takashi

PY - 2009/7

Y1 - 2009/7

N2 - To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.

AB - To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.

UR - http://www.scopus.com/inward/record.url?scp=77952649114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952649114&partnerID=8YFLogxK

U2 - 10.1002/pssc.200880931

DO - 10.1002/pssc.200880931

M3 - Article

AN - SCOPUS:77952649114

VL - 6

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - SUPPL. 2

ER -