Abstract
To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.
| Original language | English |
|---|---|
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 6 |
| Issue number | SUPPL. 2 |
| DOIs | |
| Publication status | Published - 2009 Jul |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures. / Maeda, Narihiko; Hiroki, Masanobu; Makimoto, Toshiki; Enoki, Takatomo; Kobayashi, Takashi.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. SUPPL. 2, 07.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures
AU - Maeda, Narihiko
AU - Hiroki, Masanobu
AU - Makimoto, Toshiki
AU - Enoki, Takatomo
AU - Kobayashi, Takashi
PY - 2009/7
Y1 - 2009/7
N2 - To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.
AB - To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.
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UR - http://www.scopus.com/inward/citedby.url?scp=77952649114&partnerID=8YFLogxK
U2 - 10.1002/pssc.200880931
DO - 10.1002/pssc.200880931
M3 - Article
AN - SCOPUS:77952649114
VL - 6
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - SUPPL. 2
ER -