TY - JOUR
T1 - Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures
AU - Maeda, Narihiko
AU - Hiroki, Masanobu
AU - Makimoto, Toshiki
AU - Enoki, Takatomo
AU - Kobayashi, Takashi
PY - 2009/7/1
Y1 - 2009/7/1
N2 - To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.
AB - To obtain a guideline for improving the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), both HFET and MIS HFETs were fabricated and compared, whose gate capacitances are designed to be equal. With an increased insulator thickness and decreased AlGaN thickness, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Moreover, Al2O3-based MIS HFETs were revealed to exhibit superior DC characteristics over Si3N4 MIS HFETs. Since deposition of insulators changes the electrical properties of heterostructures, considering the insulator/AlGaN structures as the total barrier layers is effective and indispensable in designing the MIS AlGaN/GaN HFETs. On the basis of the device design, MIS HFETs can be fabricated that exhibit superior device characteristics over those in conventional HFETs.
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U2 - 10.1002/pssc.200880931
DO - 10.1002/pssc.200880931
M3 - Article
AN - SCOPUS:77952649114
VL - 6
SP - S1049-S1052
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - SUPPL. 2
ER -