Improvement of photodiode responsivity using the inas quantum dot family for monolithic integration

T. Umezawa, K. Akahane, A. Kanno, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report a photodiode (PD) hybrid sub-system using a 1.5μm quantum dot (QD) semiconductor optical amplifier (SOA) and a QD-PD for a high-speed and high-sensitivity photoreceiver, and we characterize its responsivity.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2014-January
Publication statusPublished - 2014
Externally publishedYes
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: 2014 Jun 82014 Jun 13

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose
Period14/6/814/6/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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    Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2014). Improvement of photodiode responsivity using the inas quantum dot family for monolithic integration. In Conference on Lasers and Electro-Optics Europe - Technical Digest (Vol. 2014-January). [6989622] Institute of Electrical and Electronics Engineers Inc..