Improvement of the CdTe diode detectors using a guard-ring electrode

Kazuhiro Nakazawa*, Kousuke Oonuki, Takaaki Tanaka, Yoshihito Kobayashi, Ken'ichi Tamura, Takefumi Mitani, Goro Sato, Shin Watanabe, Tadayuki Takahashi, Ryoichi Ohno, Akihito Kitajima, Yoshikatsu Kuroda, Mitsunobu Onishi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Recent results from the CdTe Schottky diode detectors employing a guard-ring electrode are reported. Cathode electrode, made of Pt, was separated into an active electrode(s) and a surrounding guard-ring. Typical leakage current of a device with an active area of 2 × 2 mm2 and 0.5 mm thickness surrounded by a guard-ring, is 7 pA and 20 pA at a bias of 100 V and 500 V, respectively, operated at 20°C. Spectral resolution of this device is 0.93 keV and 1.2 keV (FWHM) at 59.5 keV and 122 keV, respectively, operated at 20°C with a bias of 800 V. Detailed study of the characteristics of these devices working as a gamma-ray detector is presented.

Original languageEnglish
Article numberR16-4
Pages (from-to)3583-3587
Number of pages5
JournalUnknown Journal
Publication statusPublished - 2003


  • CdTe
  • Diode
  • Gamma-ray
  • Guard-ring

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering


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