Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources

M. Horita; M. Suzuki; Y. Matsushima; K. Utaka

doi:10.1063/1.354342

Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources

M. Horita^*, M. Suzuki, Y. Matsushima, K. Utaka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as the p-type and n-type doping sources, respectively. Electrical properties and surface morphology of the impurity-doped layers together with their growth condition dependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8×10¹⁸ and 1×10¹⁹ cm^-3 were successfully attained for p-InP and n-InP, respectively. These results promise further safe metalorganic vapor-phase epitaxy by using organic compounds for all precursors.

Original language	English
Pages (from-to)	4737-4740
Number of pages	4
Journal	Journal of Applied Physics
Volume	74
Issue number	7
DOIs	https://doi.org/10.1063/1.354342
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.354342

Cite this

@article{626e368484834c269c572eec4661635a,

title = "Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources",

abstract = "Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as the p-type and n-type doping sources, respectively. Electrical properties and surface morphology of the impurity-doped layers together with their growth condition dependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8×1018 and 1×1019 cm-3 were successfully attained for p-InP and n-InP, respectively. These results promise further safe metalorganic vapor-phase epitaxy by using organic compounds for all precursors.",

author = "M. Horita and M. Suzuki and Y. Matsushima and K. Utaka",

year = "1993",

doi = "10.1063/1.354342",

language = "English",

volume = "74",

pages = "4737--4740",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources

AU - Horita, M.

AU - Suzuki, M.

AU - Matsushima, Y.

AU - Utaka, K.

PY - 1993

Y1 - 1993

N2 - Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as the p-type and n-type doping sources, respectively. Electrical properties and surface morphology of the impurity-doped layers together with their growth condition dependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8×1018 and 1×1019 cm-3 were successfully attained for p-InP and n-InP, respectively. These results promise further safe metalorganic vapor-phase epitaxy by using organic compounds for all precursors.

AB - Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as the p-type and n-type doping sources, respectively. Electrical properties and surface morphology of the impurity-doped layers together with their growth condition dependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8×1018 and 1×1019 cm-3 were successfully attained for p-InP and n-InP, respectively. These results promise further safe metalorganic vapor-phase epitaxy by using organic compounds for all precursors.

UR - http://www.scopus.com/inward/record.url?scp=0348051774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348051774&partnerID=8YFLogxK

U2 - 10.1063/1.354342

DO - 10.1063/1.354342

M3 - Article

AN - SCOPUS:0348051774

SN - 0021-8979

VL - 74

SP - 4737

EP - 4740

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this