Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources

M. Horita, M. Suzuki, Yuichi Matsushima, Katsuyuki Utaka

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as the p-type and n-type doping sources, respectively. Electrical properties and surface morphology of the impurity-doped layers together with their growth condition dependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8×1018 and 1×1019 cm-3 were successfully attained for p-InP and n-InP, respectively. These results promise further safe metalorganic vapor-phase epitaxy by using organic compounds for all precursors.

Original languageEnglish
Pages (from-to)4737-4740
Number of pages4
JournalJournal of Applied Physics
Volume74
Issue number7
DOIs
Publication statusPublished - 1993
Externally publishedYes

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vapor phase epitaxy
impurities
controllability
organic compounds
electrical properties

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources. / Horita, M.; Suzuki, M.; Matsushima, Yuichi; Utaka, Katsuyuki.

In: Journal of Applied Physics, Vol. 74, No. 7, 1993, p. 4737-4740.

Research output: Contribution to journalArticle

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