In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors

J. Takeya, J. Kato, K. Hara, M. Yamagishi, R. Hirahara, K. Yamada, Y. Nakazawa, S. Ikehata, K. Tsukagoshi, Y. Aoyagi, T. Takenobu, Y. Iwasa

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Abstract

Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors of rubrene single crystals by simultaneous detection of the longitudinal conductivity σ□ and Hall coefficient RH. The Hall mobility μH (σ□RH) reaches nearly 10cm2/Vs when relatively low-density carriers (<1011cm-2) distribute into the crystal. μH rapidly decreases with higher-density carriers as they are essentially confined to the surface and are subjected to randomness of the amorphous gate insulators. The mechanism to realize high carrier mobility in the organic transistor devices involves intrinsic-semiconductor character of the high-purity organic crystals and diffusive bandlike carrier transport in the bulk.

Original languageEnglish
Article number196804
JournalPhysical Review Letters
Volume98
Issue number19
DOIs
Publication statusPublished - 2007 May 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Takeya, J., Kato, J., Hara, K., Yamagishi, M., Hirahara, R., Yamada, K., Nakazawa, Y., Ikehata, S., Tsukagoshi, K., Aoyagi, Y., Takenobu, T., & Iwasa, Y. (2007). In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors. Physical Review Letters, 98(19), [196804]. https://doi.org/10.1103/PhysRevLett.98.196804