In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide

Keita Matsuda, Wataru Norimatsu, Jianfeng Bao, Hiroshi Kawarada, Michiko Kusunoki

    Research output: Contribution to journalArticle

    Abstract

    We have investigated the length-dependence of the in-plane electrical resistivity of vertically aligned and highly dense carbon nanotube (CNT) films that were dense enough to conduct electrons. The in-plane conductivity is well accounted for by a combination of inter-tube hopping (variable range hopping, VRH) and graphitic conduction. VRH conduction was dominant in the thinner CNT films, and the films showed negative temperature dependence of resistivity. The dimension of the VRH component varied depending on the CNT length. In the thicker CNT films, the graphitic conduction appeared, and then, the localization length spread, leading to the positive temperature dependence of resistivity. This behavior can be explained by the presence of a labyrinthine arrangement of graphene walls among aligned CNTs, which was confirmed by transmission electron microscopy observations.

    Original languageEnglish
    Article number045104
    JournalJournal of Applied Physics
    Volume123
    Issue number4
    DOIs
    Publication statusPublished - 2018 Jan 28

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    silicon carbides
    carbon nanotubes
    conduction
    electrical resistivity
    temperature dependence
    graphene
    tubes
    conductivity
    transmission electron microscopy
    electrons

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide. / Matsuda, Keita; Norimatsu, Wataru; Bao, Jianfeng; Kawarada, Hiroshi; Kusunoki, Michiko.

    In: Journal of Applied Physics, Vol. 123, No. 4, 045104, 28.01.2018.

    Research output: Contribution to journalArticle

    Matsuda, Keita ; Norimatsu, Wataru ; Bao, Jianfeng ; Kawarada, Hiroshi ; Kusunoki, Michiko. / In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 4.
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