Abstract
We have investigated the length-dependence of the in-plane electrical resistivity of vertically aligned and highly dense carbon nanotube (CNT) films that were dense enough to conduct electrons. The in-plane conductivity is well accounted for by a combination of inter-tube hopping (variable range hopping, VRH) and graphitic conduction. VRH conduction was dominant in the thinner CNT films, and the films showed negative temperature dependence of resistivity. The dimension of the VRH component varied depending on the CNT length. In the thicker CNT films, the graphitic conduction appeared, and then, the localization length spread, leading to the positive temperature dependence of resistivity. This behavior can be explained by the presence of a labyrinthine arrangement of graphene walls among aligned CNTs, which was confirmed by transmission electron microscopy observations.
| Original language | English |
|---|---|
| Article number | 045104 |
| Journal | Journal of Applied Physics |
| Volume | 123 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2018 Jan 28 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide. / Matsuda, Keita; Norimatsu, Wataru; Bao, Jianfeng; Kawarada, Hiroshi; Kusunoki, Michiko.
In: Journal of Applied Physics, Vol. 123, No. 4, 045104, 28.01.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide
AU - Matsuda, Keita
AU - Norimatsu, Wataru
AU - Bao, Jianfeng
AU - Kawarada, Hiroshi
AU - Kusunoki, Michiko
PY - 2018/1/28
Y1 - 2018/1/28
N2 - We have investigated the length-dependence of the in-plane electrical resistivity of vertically aligned and highly dense carbon nanotube (CNT) films that were dense enough to conduct electrons. The in-plane conductivity is well accounted for by a combination of inter-tube hopping (variable range hopping, VRH) and graphitic conduction. VRH conduction was dominant in the thinner CNT films, and the films showed negative temperature dependence of resistivity. The dimension of the VRH component varied depending on the CNT length. In the thicker CNT films, the graphitic conduction appeared, and then, the localization length spread, leading to the positive temperature dependence of resistivity. This behavior can be explained by the presence of a labyrinthine arrangement of graphene walls among aligned CNTs, which was confirmed by transmission electron microscopy observations.
AB - We have investigated the length-dependence of the in-plane electrical resistivity of vertically aligned and highly dense carbon nanotube (CNT) films that were dense enough to conduct electrons. The in-plane conductivity is well accounted for by a combination of inter-tube hopping (variable range hopping, VRH) and graphitic conduction. VRH conduction was dominant in the thinner CNT films, and the films showed negative temperature dependence of resistivity. The dimension of the VRH component varied depending on the CNT length. In the thicker CNT films, the graphitic conduction appeared, and then, the localization length spread, leading to the positive temperature dependence of resistivity. This behavior can be explained by the presence of a labyrinthine arrangement of graphene walls among aligned CNTs, which was confirmed by transmission electron microscopy observations.
UR - http://www.scopus.com/inward/record.url?scp=85041466012&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041466012&partnerID=8YFLogxK
U2 - 10.1063/1.5004507
DO - 10.1063/1.5004507
M3 - Article
AN - SCOPUS:85041466012
VL - 123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 045104
ER -