In-plane quantum energy control of InGaAs/InGaAsP MQW structure by mocvd selective area growth

M. Takahashi, M. Suzuki, M. Aoki, K. Uomi, T. Kawano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In-plane bandgap energy (Eg) control by selective area growth (SAG) has become a very attractive technique for achieving the monolithic integration of semiconductor optical devices. Recently, Eg control over a wide range has been demonstrated by applying SAG, especially to multiple-quantum well (MQW) structures in InGaAs/InP (l)-(2), and to GaAs/AlGaAs (3) material systems. For the InGaAs/InP system, SAG has already been applied to integrated devices, although research is still in the early stages, for light wave communication (l)-(2). However, the exact mechanism of the Eg variation has not yet been clarified. In this letter, the controllability of in-plane Eg is fully investigated focusing on the mechanism of quantum energy variation for InGaAs/InGaAsP MQW structures. Moreover, SAG is applied to an MQW electroabsorption (EA)-modulator/DFB-laser integrated light source. Superior properties of the device indicate that the SAG technique is promising for photonic device integration.

Original languageEnglish
Title of host publicationLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages206-209
Number of pages4
ISBN (Electronic)0780305221, 9780780305229
DOIs
Publication statusPublished - 1992 Jan 1
EventLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States
Duration: 1992 Apr 211992 Apr 24

Publication series

NameLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

ConferenceLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
CountryUnited States
CityNewport
Period92/4/2192/4/24

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications
  • Atomic and Molecular Physics, and Optics

Cite this

Takahashi, M., Suzuki, M., Aoki, M., Uomi, K., & Kawano, T. (1992). In-plane quantum energy control of InGaAs/InGaAsP MQW structure by mocvd selective area growth. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 (pp. 206-209). [235603] (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.1992.235603