In-plane X-ray diffraction profiles from organosilane monolayer/SiO 2 models

Hideaki Yamamoto, Takanobu Watanabe, Iwao Ohdomari

    Research output: Contribution to journalArticle

    Abstract

    The effect of siloxane bonding topology on in-plane X-ray diffraction (XRD) profiles of octadecylsilane self-assembled monolayers (SAMs) on SiO2 was investigated by large-scale atomistic simulation. Equilibrium structures of the octadecylsilane SAM/SiO2 systems were obtained by Metropolis Monte Carlo simulations, sampling SAM/SiO2 structures with different interfacial bonding topologies. Lateral ordering of the octadecylsilane molecules was evaluated by calculating in-plane XRD profiles from the structural models. Analyses of the diffraction profiles revealed that molecules retain a hexagonal order at thermal equilibrium and that the structural order decreases as the number of siloxane bonds increases at the SAM/SiO2 interface.

    Original languageEnglish
    Pages (from-to)1050021-1050023
    Number of pages3
    JournalApplied Physics Express
    Volume1
    Issue number10
    DOIs
    Publication statusPublished - 2008 Oct

    Fingerprint

    Self assembled monolayers
    Monolayers
    siloxanes
    X ray diffraction
    topology
    profiles
    diffraction
    x rays
    Topology
    Molecules
    molecules
    simulation
    sampling
    Diffraction
    Sampling

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    In-plane X-ray diffraction profiles from organosilane monolayer/SiO 2 models. / Yamamoto, Hideaki; Watanabe, Takanobu; Ohdomari, Iwao.

    In: Applied Physics Express, Vol. 1, No. 10, 10.2008, p. 1050021-1050023.

    Research output: Contribution to journalArticle

    Yamamoto, Hideaki ; Watanabe, Takanobu ; Ohdomari, Iwao. / In-plane X-ray diffraction profiles from organosilane monolayer/SiO 2 models. In: Applied Physics Express. 2008 ; Vol. 1, No. 10. pp. 1050021-1050023.
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