In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

Junjun Jia, Yoshifumi Torigoshi, Yuzo Shigesato

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O- with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O2). Dissociation of ZnO-, GaO-, ZnO2 -, and GaO2 - radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O- ion flux.

Original languageEnglish
Article number013501
JournalApplied Physics Letters
Volume103
Issue number1
DOIs
Publication statusPublished - 2013 Jul 1
Externally publishedYes

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gallium oxides
zinc oxides
negative ions
indium
sputtering
gases
pressure distribution
gas pressure
field strength
magnetron sputtering
energy distribution
dissociation
ceramics
electric potential
magnetic fields
ions
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process. / Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo.

In: Applied Physics Letters, Vol. 103, No. 1, 013501, 01.07.2013.

Research output: Contribution to journalArticle

Jia, Junjun ; Torigoshi, Yoshifumi ; Shigesato, Yuzo. / In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process. In: Applied Physics Letters. 2013 ; Vol. 103, No. 1.
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