Abstract
The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H2Se gas supply is probably covered with H2Se molecules.
| Original language | English |
|---|---|
| Pages (from-to) | 376-380 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 136 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1994 Mar 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Tokita, S., Kobayashi, M., & Yoshikawa, A. (1994). In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method. Journal of Crystal Growth, 136(1-4), 376-380. https://doi.org/10.1016/0022-0248(94)90443-X