In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

S. Tokita, Masakazu Kobayashi, A. Yoshikawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H2Se gas supply is probably covered with H2Se molecules.

Original languageEnglish
Pages (from-to)376-380
Number of pages5
JournalJournal of Crystal Growth
Volume136
Issue number1-4
DOIs
Publication statusPublished - 1994 Mar 1
Externally publishedYes

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Molecular beam epitaxy
Gas supply
molecular beam epitaxy
interference
Gases
gases
Signal interference
Atoms
Molecules
polarity
Experiments
atoms
molecules

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method. / Tokita, S.; Kobayashi, Masakazu; Yoshikawa, A.

In: Journal of Crystal Growth, Vol. 136, No. 1-4, 01.03.1994, p. 376-380.

Research output: Contribution to journalArticle

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