In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

S. Tokita; M. Kobayashi; A. Yoshikawa

doi:10.1016/0022-0248(94)90443-X

In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

S. Tokita, M. Kobayashi, A. Yoshikawa

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H₂Se gas supply is probably covered with H₂Se molecules.

Original language	English
Pages (from-to)	376-380
Number of pages	5
Journal	Journal of Crystal Growth
Volume	136
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90443-X
Publication status	Published - 1994 Mar 1

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ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Tokita, S., Kobayashi, M., & Yoshikawa, A. (1994). In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method. Journal of Crystal Growth, 136(1-4), 376-380. https://doi.org/10.1016/0022-0248(94)90443-X

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abstract = "The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H2Se gas supply is probably covered with H2Se molecules.",

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AB - The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H2Se gas supply is probably covered with H2Se molecules.

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10.1016/0022-0248(94)90443-X