TY - JOUR
T1 - In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method
AU - Tokita, S.
AU - Kobayashi, M.
AU - Yoshikawa, A.
N1 - Funding Information:
This work was in part supported by the Grant-in-Aid for Scientific Research No. 05452092 from the Ministry of Education, Science and Culture
PY - 1994/3/1
Y1 - 1994/3/1
N2 - The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H2Se gas supply is probably covered with H2Se molecules.
AB - The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H2Se gas supply is probably covered with H2Se molecules.
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U2 - 10.1016/0022-0248(94)90443-X
DO - 10.1016/0022-0248(94)90443-X
M3 - Article
AN - SCOPUS:0028383833
VL - 136
SP - 376
EP - 380
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -