In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb (Zr,Ti) O3 films

Mitsumasa Nakajima, Hiroshi Nakaki, Yoshitaka Ehara, Tomoaki Yamada, Ken Nishida, Takashi Yamamoto, Minoru Osada, Hiroshi Funakubo

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Abstract

We employed in situ Raman spectroscopy under electric field for (100)/(001)-oriented tetragonal Pb (Ti0.61 Zr0.39) O 3 films with (001)-volume fraction (VC) of 35%. The increase in VC was revealed above 200 kV/cm, which resulted in the larger remanent polarization. In addition, the application of high enough field also brings a feature, i.e., large reversible change in VC with/without electric field that can quantitatively explain the enhanced piezoelectric response. These demonstrate the usefulness of in situ Raman observation to probe the domain contributions to the electrical and piezoelectric responses.

Original languageEnglish
Article number181907
JournalApplied Physics Letters
Volume97
Issue number18
DOIs
Publication statusPublished - 2010 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Nakajima, M., Nakaki, H., Ehara, Y., Yamada, T., Nishida, K., Yamamoto, T., Osada, M., & Funakubo, H. (2010). In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb (Zr,Ti) O3 films. Applied Physics Letters, 97(18), [181907]. https://doi.org/10.1063/1.3502591