In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films

Naoki Sugita, Eisuke Tokumitsu, Minoru Osada, Masato Kakihana

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Abstract

In situ Raman spectra measurements have been employed to reveal the crystallization process of sol-gel derived Bi4-xLaxTi3O12 (BLT) thin films. The Raman spectra of BLT films with a La composition x of 0.75 were measured with increasing temperature up to 800°C in air and N2 ambient. It is demonstrated that Bi2O2 layered structures form first at 500°C and perovskite structures start to crystallize at 600°C or higher.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number8 A
Publication statusPublished - 2003 Aug 1
Externally publishedYes

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Keywords

  • Bismuth titanate
  • Crystallization
  • Ferroelectrics
  • Raman spectra
  • Thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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