In situ tuning of magnetization and magnetoresistance in fe3o4 thin film achieved with all-solid-state redox device

Takashi Tsuchiya, Kazuya Terabe, Masanori Ochi, Tohru Higuchi, Minoru Osada, Yoshiyuki Yamashita, Shigenori Ueda, Masakazu Aono

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

An all-solid-state redox device composed of Fe3O4 thin film and Li+ ion conducting solid electrolyte was fabricated for use in tuning magnetization and magnetoresistance (MR), which are key factors in the creation of high-density magnetic storage devices. Electrical conductivity, magnetization, and MR were reversibly tuned by Li+ insertion and removal. Tuning of the various Fe3O4 thin film properties was achieved by donation of an electron to the Fe3+ ions. This technique should lead to the development of spintronics devices based on the reversible switching of magnetization and spin polarization (P). It should also improve the performance of conventional magnetic random access memory (MRAM) devices in which the ON/OFF ratio has been limited to a small value due to a decrease in P near the tunnel barrier.

Original languageEnglish
Pages (from-to)1655-1661
Number of pages7
JournalACS Nano
Volume10
Issue number1
DOIs
Publication statusPublished - 2016 Jan 26
Externally publishedYes

Keywords

  • All-solid-state
  • Magnetite
  • Magnetoresistance
  • Nanoionics
  • Solid state ionics

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Tsuchiya, T., Terabe, K., Ochi, M., Higuchi, T., Osada, M., Yamashita, Y., Ueda, S., & Aono, M. (2016). In situ tuning of magnetization and magnetoresistance in fe3o4 thin film achieved with all-solid-state redox device. ACS Nano, 10(1), 1655-1661. https://doi.org/10.1021/acsnano.5b07374